Wafer level processing for backside illuminated sensors

• US 7,859,033 B2
• Filed: 07/09/2008
• Issued: 12/28/2010
• Est. Priority Date: 07/09/2008
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Eastman Kodak Company
• Inventors: Brady, Frederick T.
• Primary Examiner(s): CHEN, JACK S J
• Application Number:
  US12/169,791
• Publication Number:
  US 20100006963A1
• Time in Patent Office: 902 Days
• Field of Search: 257/294, 257/431, 257/447, 257/460, 257/E27.133
• US Class Current: 257/294
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

Claims

1. An image sensor having a pixel array configured for backside illumination, comprising:

a sensor layer comprising a plurality of photosensitive elements of the pixel array;

an oxide layer adjacent a backside surface of the sensor layer;

at least one dielectric layer adjacent a frontside surface of the sensor layer;

a color filter array formed on a backside surface of the oxide layer;

a transparent cover attached to the backside surface of the oxide layer and overlying the color filter array;

redistribution metal conductors in electrical contact with respective bond pad conductors through respective openings in said at least one dielectric layer;

a redistribution passivation layer formed over the redistribution metal conductors; and

contact metallizations in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer.

2. The image sensor of claim 1 wherein the transparent cover comprises a central cavity arranged over the color filter array and further comprises peripheral supports secured to the backside surface of the oxide layer.

3. The image sensor of claim 1 further comprising solder balls attached to respective ones of the contact metallizations in the respective openings in the redistribution passivation layer.

4. The image sensor of claim 1 wherein the transparent cover comprises a glass cover.

5. The image sensor of claim 1 wherein the contact metallizations comprise under-ball metallizations.

6. The image sensor of claim 1 wherein said at least one dielectric layer comprises an interlayer dielectric and further comprises an intermetal dielectric separating multiple levels of metallization.

7. The image sensor of claim 1 wherein said image sensor comprises a CMOS image sensor.