IC card and booking-account system using the IC card

• US 7,863,116 B2
• Filed: 01/06/2010
• Issued: 01/04/2011
• Est. Priority Date: 12/27/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Goto, Yuugo, Ohno, Yumiko, Takayama, Toru, Maruyama, Junya, Akiba, Mai
• Primary Examiner(s): Vu; David
• Assistant Examiner(s): Taylor; Earl N
• Application Number:
  US12/652,910
• Publication Number:
  US 20100144070A1
• Time in Patent Office: 363 Days
• Field of Search: 438/30, 438/458, 438/149, 438/151, 257/632, 257/635, 156/247, 156/249, 156/344
• US Class Current: 438/149
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06Q 20/105 involving programming of a portable memory device, e.g. IC cards, "electronic purses"
• CPC Class Codes: G06Q 20/3415 Cards acting autonomously as pay-media
• CPC Class Codes: G07F 7/1008 Active credit-cards provided with means to personalise their use, e.g. with PIN-introduction/comparison system
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10271 Silicon-germanium [SiGe]
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

Claims

1. A method of forming a semiconductor device comprising:

forming a metal film over a substrate;

forming a metal oxide film over the metal film by oxidizing a surface of the metal film by generating plasma;

forming an oxide film over the metal oxide film;

forming a base film over the oxide film;

forming at least one thin film transistor over the base film; and

peeling off the at least one thin film transistor and the base film from the substrate inside the metal oxide film or at an interface of the metal oxide film by physical means.

2. The method of forming the semiconductor device according to claim 1, further comprising forming an insulating film on the substrate.

3. The method of forming the semiconductor device according to claim 1, wherein the metal film includes tungsten.

4. The method of forming the semiconductor device according to claim 1, wherein the oxide film is formed without being exposed to air after the metal film is formed.

5. A method of forming a semiconductor device comprising:

forming an antenna coil over a printed wiring board;

forming a thin film integrated circuit including steps of;

forming a metal film over a substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming at least one thin film transistor over the base film; and

peeling off the at least one thin film transistor and the base film from the substrate inside the metal oxide film or at an interface of the metal oxide film by physical means; and

attaching the thin film integrated circuit to the printed wiring board by an adhesive agent,

wherein the thin film integrated circuit is electrically connected to the antenna coil.

6. The method of forming the semiconductor device according to claim 5, further comprising forming an insulating film on the substrate.

7. The method of forming the semiconductor device according to claim 5, wherein the metal film includes tungsten.

8. The method of forming the semiconductor device according to claim 5, wherein the oxide film is formed without being exposed to air after the metal film is formed.

9. A method of forming a semiconductor device comprising:

forming an antenna coil over a printed wiring board;

forming a display device and a thin film integrated circuit comprising;

forming a metal film over a substrate;

forming an oxide film over the metal film wherein a metal oxide film is formed between the metal film and the oxide film;

forming a base film over the oxide film;

forming at least two thin film transistors over the base film; and

peeling off the at least two thin film transistors and the base film from the substrate inside the metal oxide film or at an interface of the metal oxide film by physical means; and

attaching the display device and the thin film integrated circuit to the printed wiring board by an adhesive agent,

wherein the thin film integrated circuit is electrically connected to the antenna coil and the display device.

10. The method of forming the semiconductor device according to claim 9, further comprising forming an insulating film on the substrate.

11. The method of forming the semiconductor device according to claim 9, wherein the metal film includes tungsten.

12. The method of forming the semiconductor device according to claim 9, wherein the oxide film is formed without being exposed to air after the metal film is formed.