High quality silicon oxide films by remote plasma CVD from disilane precursors

• US 7,867,923 B2
• Filed: 10/22/2007
• Issued: 01/11/2011
• Est. Priority Date: 10/22/2007
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Mallick, Abhijit Basu, Nemani, Srinivas D., Yieh, Ellie
• Primary Examiner(s): Sandvik; Benjamin P
• Assistant Examiner(s): KHAN, FARID H
• Application Number:
  US11/876,538
• Publication Number:
  US 20090104755A1
• Time in Patent Office: 1,177 Days
• Field of Search: 438/791, 438/477, 438/787, 438/788, 257/E21.24
• US Class Current: 438/791
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

Claims

1. A method of depositing a silicon and nitrogen containing film on a substrate, the method comprising:

introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms;

generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber; and

introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate, wherein the silicon and nitrogen containing film is flowable during deposition.

2. The method of claim 1, wherein the generation of the atomic nitrogen comprises exposing ammonia to a plasma in the remote plasma system, wherein at least a portion of the ammonia decomposes into the radical nitrogen precursor.

3. The method of claim 1, wherein the radical nitrogen precursor has the formula NH_x, where x is 0, 1 or 2.

4. The method of claim 1, wherein the silicon-containing precursor comprises a disilane precursor or a polysilane precursor.

5. The method of claim 1, wherein the silicon-containing precursor is selected from the group consisting of alkoxy disilanes, alkoxy-alkyl disilanes, and polysilanes.

6. The method of claim 1, wherein the silicon and nitrogen containing film comprises a silicon carbonitride film.

7. The method of claim 1, wherein the silicon and nitrogen containing film comprises a Si—

N(H)—

Si bond containing film.

8. The method of claim 1, wherein the method further comprises annealing the silicon and nitrogen containing film to form a silicon oxide film.

9. The method of claim 8, wherein the annealing is performed in an atmosphere comprising steam.

10. The method of claim 8, wherein the annealing is performed in an atmosphere comprising acid vapor.

11. The method of claim 8, wherein the annealing is performed at a temperature ranging from about 20°

C. to about 1050°

C.

12. The method of claim 8, wherein the annealing is performed in an atmosphere comprising ozone (O₃).

13. The method of claim 12, wherein the annealing further comprises exposing the substrate to ultra-violet light at a temperature ranging from about 20°

C. to about 600°

C.

14. The method of claim 8, wherein the annealing is performed in an atmosphere comprising molecular oxygen (O₂).

15. The method of claim 8, wherein the annealing is performed in an atmosphere comprising atomic oxygen (O) at a temperature ranging from about 20°

C. to about 600°

C.

16. The method of claim 8, wherein the annealing is performed at a temperature ranging from about 200°

C. to about 1050°

C.