System and method for CMOS image sensing

• US 7,868,367 B2
• Filed: 06/10/2008
• Issued: 01/11/2011
• Est. Priority Date: 12/13/2007
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International Corporation
• Original Assignee: Semiconductor Manufacturing International Corporation
• Inventors: Hong, Zhu, Yang, Jim
• Primary Examiner(s): Soward; Ida M
• Application Number:
  US12/136,568
• Publication Number:
  US 20090152604A1
• Time in Patent Office: 945 Days
• Field of Search: 257 83- 84, 257/187, 257290-292, 257461-462, 257/464, 257/E33.045, 257/E33.076, 257/E33.077
• US Class Current: 257/292
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Claims

1. A CMOS image sensing pixel comprising:

an n-type substrate, the n-type substrate including a first width and a first thickness;

a p-type epitaxy layer overlying the n-type substrate, the p-type epitaxy layer including a second width and a second thickness, the second width including an adjustable depletion region between the n-type substrate and the p-type epitaxy layer, the adjustable depletion region being associated with one or more characteristics of a colored light;

an n-type layer overlying the p-type epitaxy layer, the n-type layer being associated with a third width and a third thickness;

a pn junction formed between the p-type epitaxy layer and the n-type layer; and

a control circuit being coupled to the CMOS image sensing pixel.

2. The CMOS image sensing pixel of claim 1 wherein the p-type epitaxy layer includes a silicon material.

3. The CMOS image sensing pixel of claim 1 wherein the p-type epitaxy layer has a thickness range of 2 um to 7 um.

4. The CMOS image sensing pixel of claim 1 wherein the control circuit includes a color selecting component.

5. The CMOS image sensing pixel of claim 1 wherein the n-type substrate includes a silicon material.

6. The CMOS image sensing pixel of claim 1 wherein the second width is associated with a quantum efficiency.

7. The CMOS image sensing pixel of claim 1 wherein the second width is associated with a quantum efficiency, the quantum efficiency being associated with a color.

8. The CMOS image sensing pixel of claim 1 wherein the third width is associated with a depletion region caused by the n-type layer and the p-type epitaxy layer.

9. The CMOS image sensing pixel of claim 1 wherein the control circuit comprises a voltage source for applying a first voltage, a second voltage, and a third voltage to the n-type substrate, wherein:

the first voltage is configured for resulting in a first output, the first output being associated with a first color;

the second voltage is configured for resulting in a second output, the second output being associated with a second color, and

the third voltage is configured for resulting in a third output, the third output being associated with a third color;

wherein the first color, the second color, and the third color are further determined using a first weighting factor, a second weighting factor, and a third weighting factor.

10. The CMOS image sensing pixel of claim 1 further comprising a first epitaxy layer, the first epitaxy layer being positioned between the n-type substrate and the p-type silicon epitaxy layer.

11. The CMOS image sensing pixel of claim 10 wherein the first epitaxy layer includes a silicon germanium material.

12. An image sensing pixel, comprising:

an n-type silicon substrate, the n-type semiconductor substrate including a first width;

a p-type silicon layer overlying the n-type substrate, the p-type silicon layer including a second width;

an n-type silicon layer overlying the p-type silicon layer, the n-type silicon layer being associated with a third width;

a pn junction formed between the p-type silicon layer and the n-type silicon layer; and

a silicon germanium layer in the p-type silicon layer, the silicon germanium layer being positioned away from the pn junction.

13. The image sensing pixel of claim 12 wherein the silicon germanium layer is free from pn junctions.

14. The image sensing pixel of claim 12 wherein the silicon germanium layer is configured for absorption of red light.

15. An image sensing pixel device, comprising:

a first photodiode having a first p-type region and a first n-type region forming a first pn junction overlying a first n-type substrate;

a second photodiode having a second p-type region and a second n-type region forming a second pn junction overlying a second n-type substrate;

a third photodiode having a third p-type region and a third n-type region forming a third pn junction overlying a third n-type substrate;

a terminal coupled to the first n-type region, the second n-type region, and the third n-type region;

a first bias voltage coupled to the first n-type substrate;

a second bias voltage coupled to the second n-type substrate; and

a third bias voltage coupled to the third n-type substrate.

16. The image sensing pixel device of claim 15, wherein:

the third p-type region further comprising a silicon germanium region disposed away from the third pn junction.

17. The image sensing pixel device of claim 15, wherein the first bias voltage is configured for absorption of blue light.

18. The image sensing pixel device of claim 15, wherein the second bias voltage is configured for absorption of green light.

19. The image sensing pixel device of claim 15, wherein the third bias voltage is configured for absorption of red light.