Abrasive, method of polishing target member and process for producing semiconductor device

  • US 7,871,308 B2
  • Filed: 07/12/2006
  • Issued: 01/18/2011
  • Est. Priority Date: 12/18/1997
  • Status: Expired due to Term
First Claim
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1. A method of polishing a target member, comprising polishing a target member by the use of an abrasive comprising a slurry including a medium and cerium oxide particles dispersed in said medium, said cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries, wherein:

  • cerium oxide particles with a diameter not smaller than 1 μ

    m occupies at least 0.1% by weight of the total weight of the cerium oxide particles; and

    said cerium oxide particles having crystal grain boundaries have a characteristic of polishing a target member while collapsing.

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