Method of manufacturing semiconductor device includes the step of depositing the capacitor insulating film in a form of a hafnium silicate
First Claim
1. A method of manufacturing a semiconductor device having a trench capacitor comprising:
- forming a trench in a substrate body;
forming a first electrode on an inner surface of the trench;
forming a capacitor insulating film on a surface of said first electrode; and
forming a second electrode on a surface of said capacitor insulating film, said method comprising;
depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent, wherein a temperature of the substrate body while said hafnium silicate film is deposited in the atomic layer deposition process is set equal to or higher than 330°
C. and equal to or lower than 400°
C.
1 Assignment
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Accused Products
Abstract
The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.
5 Citations
6 Claims
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1. A method of manufacturing a semiconductor device having a trench capacitor comprising:
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forming a trench in a substrate body; forming a first electrode on an inner surface of the trench; forming a capacitor insulating film on a surface of said first electrode; and forming a second electrode on a surface of said capacitor insulating film, said method comprising; depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent, wherein a temperature of the substrate body while said hafnium silicate film is deposited in the atomic layer deposition process is set equal to or higher than 330°
C. and equal to or lower than 400°
C. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a semiconductor device having a trench capacitor comprising :
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forming a trench semiconductor device portion; forming a first electrode over an inner surface of the trench; forming a capacitor insulating film over a surface of said first electrode; and forming a second electrode over a surface of said capacitor insulating film, said method further comprising; depositing said capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent, and wherein a pressure of a film deposition ambient atmosphere in the atomic layer deposition process is set equal to or higher than 267 Pa and equal to or lower than 667 Pa. and further wherein a temperature of the substrate body within which the trench is formed while said hafnium silicate film is deposited in the atomic layer deposition process is set equal to or higher than 330°
C. and equal to or lower than 400°
C. - View Dependent Claims (6)
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Specification