Method for manufacturing semiconductor device having vertical transistor

• US 7,871,913 B2
• Filed: 12/16/2008
• Issued: 01/18/2011
• Est. Priority Date: 01/02/2008
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kim, Sung Jun, Park, Jum Yong, Park, Hyung Soon, Shin, Jong Han
• Primary Examiner(s): EVERHART, CARIDAD
• Application Number:
  US12/335,668
• Publication Number:
  US 20090170302A1
• Time in Patent Office: 763 Days
• Field of Search: 438/589, 438/156, 257/E21.294, 257/E21.429, 257/E21.045, 257/E21.612, 257/E21.621
• US Class Current: 438/589
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence

Abstract

A method for manufacturing a semiconductor device having a vertical transistor includes forming hard masks on a semiconductor substrate to expose portions of the semiconductor substrate. Then the exposed portions of the semiconductor substrate are etched to define grooves in the semiconductor substrate. A gate conductive layer is formed on the hard masks and surfaces of the grooves to a thickness that does not completely fill the grooves. A sacrificial layer is formed on the gate conductive layer to completely fill the grooves. A partial thickness of the sacrificial layer is removed to expose the gate conductive layer and portions of the gate conductive layer formed on the hard masks and on sidewalls of upper portions of the grooves are removed. The remaining sacrificial layer is completely removed. Gates are formed on sidewalls of lower portions of the grooves by etching the gate conductive layer.

Claims

1. A method for manufacturing a semiconductor device having a vertical transistor, comprising the steps of:

forming hard masks on a semiconductor substrate such that portions of the semiconductor substrate are exposed;

etching the exposed portions of the semiconductor substrate to define grooves therein, wherein the grooves comprise first grooves and second grooves, the second grooves being formed beneath the first grooves and having a width greater than that of the first grooves;

forming a gate conductive layer on the hard masks and surfaces of the first and second grooves to a thickness, wherein the gate conductive layer does not fill the first and second grooves;

forming a sacrificial layer on the gate conductive layer to fill the first and second grooves;

removing a partial thickness of the sacrificial layer to expose the gate conductive layer,

removing a portion of the gate conductive layer formed on the hard masks and on sidewalls of upper portions of the first grooves;

removing the remaining sacrificial layer; and

forming gates on sidewalls of the second grooves by selectively etching the gate conductive layer formed on sidewalls of lower portions of the first grooves and on bottoms of the second grooves.

2. The method according to claim 1, wherein the step of etching the exposed portions of the semiconductor substrate to define grooves comprises the steps of:

anisotropically etching the exposed portions of the semiconductor substrate to define the first grooves;

forming spacers on sidewalls of the first grooves and sidewalls the hard masks; and

isotropically etching portions of the semiconductor substrate beneath the first grooves using the hard masks and the spacers as etch masks to define the second grooves.

3. The method according to claim 1, wherein the method further comprises the step of:

after etching the exposed portions of the semiconductor substrate to define grooves and before forming the gate conductive layer, forming a gate insulation layer on the hard masks and surfaces of the first and second grooves.

4. The method according to claim 1, wherein the gate conductive layer comprises a polysilicon layer.

5. The method according to claim 1, wherein the sacrificial layer is formed as any one oxide layer among a high density plasma layer, a borophosphosilicate glass layer, a spin-on dielectric layer, a tetraethyl orthosilicate layer, an undoped silicate glass layer, and an atomic layer deposition.

6. The method according to claim 1, wherein the sacrificial layer is formed to a thickness in the range of 500˜

6,000 Å

.

7. The method according to claim 1, wherein the step of forming the gates is implemented by anisotropically etching the gate conductive layer.

8. The method according to claim 1, wherein the hard masks comprise a stacked structure of a pad oxide layer and a pad nitride layer.

9. The method according to claim 8, wherein the pad nitride layer is formed to a thickness in the range of 500˜

1,000 Å

.

10. The method according to claim 1, wherein the step of removing the partial thickness of the sacrificial layer to expose the gate conductive layer is implemented through at least one of a chemical mechanical polishing (CMP) process and an etch-back process.

11. The method according to claim 10, wherein the CMP process is conducted using a slurry having polishing selectivity in the range of 100:

1˜

300;

1 between an oxide layer and a polysilicon layer.

12. The method according to claim 10, wherein the CMP process is conducted using a ceria slurry.

13. The method according to claim 1, wherein the step of removing the portion of the gate conductive layer formed on the hard masks and on the sidewalls of the upper portions of the first grooves is implemented through a wet etching process.

14. The method according to claim 13, wherein the wet etching process is conducted using HNO₃.

15. The method according to claim 13, wherein the wet etching process is conducted using a chemical having etching selectivity in the range of 150:

1˜

300;

1 between a polysilicon layer and an oxide layer.

16. The method according to claim 15, wherein the wet etching process is conducted using a chemical prepared by adding HF to HNO₃.

17. The method according to claim 16, wherein HF is added to HNO₃ at a rate in the range of 0.1˜

20 wt %.

18. The method according to claim 1, wherein the step of removing the remaining sacrificial layer is implemented through a wet etching process.

19. The method according to claim 18, wherein the wet etching process is conducted using HF.