Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same

• US 7,871,931 B2
• Filed: 09/20/2005
• Issued: 01/18/2011
• Est. Priority Date: 09/20/2005
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Baker, James C., DiCarlo, Anthony, Chen, Jingqiu, He, Yanghua, Rothenbury, David A.
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US11/231,249
• Publication Number:
  US 20070066063A1
• Time in Patent Office: 1,946 Days
• Field of Search: 216/89, 438/691, 438/692, 438/693
• US Class Current: 438/689
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Claims

1. A method for planarizing a metal layer, comprising:

forming control circuitry on or in a semiconductor substrate;

depositing a photoresist layer over the semiconductor substrate;

forming a metal layer over the photoresist layer; and

planarizing the metal layer using a chemical mechanical planarization process to leave a planarized metal layer extending over the photoresist layer.

2. The method as recited in claim 1 wherein the metal layer is formed on the photoresist layer.

3. The method as recited in claim 1 wherein the metal layer includes aluminum.

4. The method as recited in claim 1 wherein the metal layer is planarized without shearing the metal layer from the photoresist layer.

5. The method as recited in claim 1 wherein planarizing includes planarizing using a down force of less than about 4 psi.

6. The method as recited in claim 1 wherein planarizing includes planarizing using a down force ranging from about 0.5 psi to about 2.0 psi.

7. The method as recited in claim 1 wherein the metal layer includes a post extending into an opening in the photoresist layer.

8. The method as recited in claim 1 wherein the metal layer has a surface roughness, and the planarizing reduces the surface roughness.

9. The method as recited in claim 1 wherein the metal layer is a metal hinge layer used in a micro pixel array.

10. The method as recited in claim 1 wherein the metal layer is a metal mirror layer used in a micro pixel array.

11. The method as recited in claim 1 wherein the metal layer is 2000 nm or less thick.

12. The method as recited in claim 1 wherein the metal layer is 1000 nm or less thick.

13. A method for manufacturing a micro pixel array, comprising:

forming control circuitry on or in a semiconductor substrate;

forming a hinge over the control circuitry;

forming a photoresist layer over the hinge;

forming a metal layer over the photoresist layer, the metal layer having a surface roughness; and

planarizing the metal layer using a chemical mechanical planarization process, the planarizing reducing the surface roughness and leaving a planarized metal layer extending over the photoresist layer.

14. The method as recited in claim 13 wherein the metal layer is formed on the photoresist layer.

15. The method as recited in claim 13 wherein the metal layer includes aluminum.

16. The method as recited in claim 13 wherein the metal layer is planarized without shearing the metal layer from the photoresist layer.

17. The method as recited in claim 13 wherein planarizing includes planarizing using a down force of less than about 4 psi.

18. The method as recited in claim 13 wherein planarizing includes planarizing using a down force ranging from about 0.5 psi to about 2.0 psi.

19. The method as recited in claim 13 wherein forming a hinge over the control circuitry includes forming an initial spacer layer over the control circuitry, patterning the initial spacer layer, forming an initial metal layer over the patterned initial spacer layer, and patterning the initial metal layer resulting in the hinge.

20. The method as recited in claim 19 wherein forming the photoresist layer over the hinge includes depositing the photoresist layer over the hinge and patterning an opening in the deposited photoresist layer.

21. The method as recited in claim 20 wherein forming the metal layer over the photoresist layer further includes forming the metal layer over the photoresist layer and within the opening.

22. The method as recited in claim 21 further including patterning the planarized metal layer and then removing the initial photoresist layer and the photoresist layer.