MUGFET with optimized fill structures

• US 7,888,736 B2
• Filed: 08/29/2007
• Issued: 02/15/2011
• Est. Priority Date: 08/29/2007
• Status: Active Grant

• Current Assignee: Auriga Innovations, Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: International Business Machines Corporation
• Inventors: Anderson, Brent, Nowak, Edward J., Bryant, Andres
• Primary Examiner(s): Gurley; Lynne A
• Assistant Examiner(s): MATTHEWS, COLLEEN ANN
• Application Number:
  US11/846,825
• Publication Number:
  US 20090057781A1
• Time in Patent Office: 1,266 Days
• Field of Search: 257/347, 257/368, 257/E21.444, 257/E27.112
• US Class Current: 257/347
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.

Claims

1. A semiconductor structure comprising:

active multi-gate fin-type field effect transistor (MUGFET) structures; and

inactive MUGFET fill structures between said active MUGFET structures,

wherein said gates of said active MUGFET structures are parallel to said gates of said inactive MUGFET fill structures, and

wherein said gates of said active MUGFET structures have a same pitch as said gates of said inactive MUGFET fill structures.

2. A semiconductor structure comprising:

active multi-gate fin-type field effect transistor (MUGFET) structures; and

inactive MUGFET fill structures between said active MUGFET structures,

wherein said gates of said active MUGFET structures have a same pitch as said gates of said inactive MUGFET fill structures,

wherein said gates of said active MUGFET structures are parallel to said gates of said inactive MUGFET fill structures, and

wherein fins of said active MUGFET structures are a same size as fins of said inactive MUGFET fill structures.