MUGFET with optimized fill structures

  • US 7,888,736 B2
  • Filed: 08/29/2007
  • Issued: 02/15/2011
  • Est. Priority Date: 08/29/2007
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • active multi-gate fin-type field effect transistor (MUGFET) structures; and

    inactive MUGFET fill structures between said active MUGFET structures,wherein said gates of said active MUGFET structures are parallel to said gates of said inactive MUGFET fill structures, andwherein said gates of said active MUGFET structures have a same pitch as said gates of said inactive MUGFET fill structures.

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