Dual sensitivity image sensor

• US 7,889,258 B2
• Filed: 09/11/2009
• Issued: 02/15/2011
• Est. Priority Date: 06/15/1999
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Inventors: Barna, Sandor, Wang, Yibing (Michelle)
• Primary Examiner(s): Chan; Jason
• Assistant Examiner(s): FOSSELMAN, JOEL W
• Application Number:
  US12/557,670
• Publication Number:
  US 20100002118A1
• Time in Patent Office: 522 Days
• Field of Search: 348/308, 250/208
• US Class Current: 348/308
• CPC Class Codes: H04N 25/585 with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
• CPC Class Codes: H04N 25/59 by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor

Abstract

A system of taking images of different sensitivities at the same time uses both an image sensor, and an auxiliary part to the image sensor. The image sensor element can be a photogate, and the auxiliary part can be the floating diffusion associated with the photogate. Both the photogate and the floating diffusion accumulate charge. Both are sampled at different times. The floating diffusion provides a lower sensitivity amount of charge than the photogate itself. The system can have a photogate and floating diffusion in each pixel along with a select transistor, a reset transistor, and a follower transistor. All of this circuitry can be formed of CMOS for example. The system can also operate in a column/parallel mode, where each column of the photo sensor array can have a column signal processor which samples and holds the reset signal, the floating diffusion signal and the photogate signal.

Claims

1. A dual sensitivity pixel comprising:

first and second photosensors, the first photosensor being of a higher light sensitivity than the second photosensor;

a transfer gate positioned between the first and second photosensors; and

readout circuitry connected to the second photosensor operable to produce output signals corresponding to charge produced by each of the first and second photosensors during respective first and second overlapping integration periods,

wherein the first photosensor is readout by sampling charge stored in the second photosensor after the transfer gate positioned between the first and second photosensors is activated to cause charge produced by the first photosensor to be transferred to the second photosensor.

2. The dual sensitivity pixel of claim 1, wherein the second photosensor is configured as a floating diffusion region.

3. The dual sensitivity pixel of claim 1, further including a reset transistor, connected between a reset voltage terminal and the second photosensor.

4. The dual sensitivity pixel of claim 3, wherein the readout circuitry is operable to:

reset the second photosensor to a reset level,

sample the reset level,

allow the second integration period to elapse, and

sample a pixel image signal level from the second photosensor,

before the transfer gate is activated to cause charge from the first photosensor to be transferred to the second photosensor.

5. The dual sensitivity pixel of claim 1, wherein the readout circuitry comprises separate sample and hold circuitry for sampling each of a pixel reset level and pixel image signal levels from the first and second photosensors.

6. The dual sensitivity pixel of claim 5, wherein the readout circuitry is configured to output a first, low sensitivity output indicative of a difference between the pixel image signal level from the second photosensor and the pixel reset level and a second, high sensitivity output indicative of a difference between the pixel image signal level from the first photosensor and the pixel reset level.

7. The dual sensitivity pixel of claim 1, wherein the first and second integration period overlap for at least 80 % of a common integration period.

8. An image processor, comprising a processor;

and

an imager, comprising;

a pixel array arranged in rows and columns, at least one pixel in the array comprising;

high and low sensitivity photosensors;

a transfer gate positioned between the high and low sensitivity photosensors; and

readout circuitry connected to the low sensitivity photosensor operable to produce output signals corresponding to charge produced by each of the high and low sensitivity photosensors during respective first and second overlapping integration periods,

wherein the high sensitivity photosensor is readout by sampling charge stored in the low sensitivity photosensor after the transfer gate positioned between the high and low sensitivity photosensors is activated to cause charge produced by the high sensitivity photosensor to be transferred to the low sensitivity photosensor.

9. The image processor of claim 8, wherein the low sensitivity photosensor is configured as a floating diffusion region.

10. The image processor of claim 8, wherein the high sensitivity photosensor is about 30-40 times more sensitive to light than the low sensitivity photosensor.

11. The image processor of claim 8, wherein the readout circuitry comprises separate sample and hold circuitry for sampling each of a pixel reset level and pixel image signal levels from the high and low sensitivity photosensors.

12. The image processor of claim 8, further comprising a control circuit, operating to control said first and second integration periods such that the first integration period is at least as long as the second integration period and the overlap between the two periods is at least 80%.