Semiconductor device including MISFET having internal stress film

  • US 7,893,501 B2
  • Filed: 07/09/2008
  • Issued: 02/22/2011
  • Est. Priority Date: 06/16/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising a MISFET, whereinthe MISFET includes:

  • an active region made of a semiconductor substrate;

    a gate insulating film formed on the active region;

    a gate electrode formed on the gate insulating film;

    source/drain regions formed in regions of the active region located on both sides of the gate electrode; and

    a silicon nitride film formed over from side surfaces of the gate electrode to upper surfaces of the source/drain regions, wherein;

    the silicon nitride film is not formed on an upper surface of the gate electrode, andthe gate electrode protrudes upward from a surface level of parts of the silicon nitride film located at both side surfaces of the gate electrode.

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