Electroless layer plating process and apparatus
First Claim
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1. A method of forming a metal layer on a surface of a partially fabricated semiconductor device substrate, the method comprising(a) contacting the surface of the semiconductor device substrate with a liquid reducing agent solution, wherein the reducing agent solution comprises insufficient metal ion to permit electroless plating of the metal;
- (b) contacting the surface of the semiconductor device substrate with a liquid metal ion solution, wherein the metal ion solution comprises insufficient reducing agent to permit electroless plating of the metal, whereby the metal ion reacts with the reducing agent at the substrate surface to electrolessly plate the metal on the substrate surface; and
(c) repeating (a) and (b) one or more times to gradually build up the metal layer, wherein each repetition of (a) and (b) generates a thin metal layer, on the order of about 1 to 50 atomic layers.
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Abstract
Electroless plating is performed to deposit conductive materials on work pieces such as partially fabricated integrated circuits. Components of an electroless plating bath are separately applied to a work piece by spin coating to produce a very thin conductive layer (in the range of a few hundred angstroms). The components are typically a reducing agent and a metal source.
36 Citations
23 Claims
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1. A method of forming a metal layer on a surface of a partially fabricated semiconductor device substrate, the method comprising
(a) contacting the surface of the semiconductor device substrate with a liquid reducing agent solution, wherein the reducing agent solution comprises insufficient metal ion to permit electroless plating of the metal; -
(b) contacting the surface of the semiconductor device substrate with a liquid metal ion solution, wherein the metal ion solution comprises insufficient reducing agent to permit electroless plating of the metal, whereby the metal ion reacts with the reducing agent at the substrate surface to electrolessly plate the metal on the substrate surface; and (c) repeating (a) and (b) one or more times to gradually build up the metal layer, wherein each repetition of (a) and (b) generates a thin metal layer, on the order of about 1 to 50 atomic layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a metal layer on a surface of a partially fabricated semiconductor device substrate the method comprising
(a) delivering a liquid reducing agent solution to the surface of a semiconductor device substrate to cause said reducing agent to adsorb to the substrate surface; -
(b) stopping or reducing delivery of the reducing agent solution to the substrate surface; (c) delivering a liquid metal ion solution to the substrate surface, whereby the metal ion reacts with the adsorbed reducing agent at the substrate surface to electrolessly plate the metal on the substrate surface; and (d) repeating (a) through (c) one or more times to gradually build up the metal layer, wherein each repetition of (a) through (c) generates a thin metal layer, on the order of about 1 to 50 atomic layers.
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20. A method of forming a metal layer on a surface of a partially fabricated semiconductor device substrate, the method comprising
(a) delivering a metal source solution to the surface of a semiconductor device substrate to cause said metal source to adsorb to the substrate surface; -
(b) stopping or reducing delivery of the metal source solution to the substrate surface; (c) delivering a reducing agent solution to the substrate surface, whereby the reducing agent reacts with the adsorbed metal source at the substrate surface to electrolessly plate the metal on the substrate surface; (d) repeating (a) through (c) one or more times to gradually build up the metal layer, wherein each repetition of (a) through (c) generates a thin metal layer, on the order of about 1 to 50 atomic layers, wherein repeating (a) comprises contacting the metal source solution to the metallic layer on the substrate. - View Dependent Claims (21)
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22. A method of forming a composite metal layer on a surface of a semiconductor device substrate, the method comprising
(a) contacting the semiconductor device substrate surface with a liquid reducing agent solution, wherein the reducing agent solution comprises insufficient metal ion to permit electroless plating of the metal; -
(b) contacting the substrate surface with a liquid first metal ion solution, wherein the first metal ion solution comprises insufficient reducing agent to permit electroless plating of the first metal, whereby the first metal ion reacts with the reducing agent at the substrate surface to electrolessly plate a first metal layer on the substrate surface; (c) contacting the substrate surface with a liquid reducing agent solution, wherein the reducing agent solution comprises insufficient metal ion to permit electroless plating of the metal; and (d) contacting the substrate surface with a liquid second metal ion solution, wherein the second metal ion is a different than the first metal ion and the second metal ion solution comprises insufficient reducing agent to permit electroless plating of the metal, whereby the second metal ion reacts with the reducing agent at the substrate surface to electrolessly plate the second metal on the first metal layer. - View Dependent Claims (23)
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Specification