Light emitting device and manufacturing method thereof
First Claim
1. A light emitting device comprising:
- a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface;
a light absorbing multi-layered film formed over a portion of the first electrode wherein the light absorbing multi-layered film comprises a first light transmitting film, a film comprising one selected from the group consisting of Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, and Ta, and a second light transmitting film;
a bank covering an end portion of the first electrode;
a layer containing an organic compound formed over and in contact with a side surface of the first electrode; and
a second electrode formed over the bank and the layer containing the organic compound,wherein the first electrode is a multi-layered structure, wherein a number of laminated layers of the first electrode at an end region of the first electrode is more than a number of laminated layers of the first electrode at a central region,wherein at least one of the first light transmitting film and the second light transmitting film is a nitride insulating film, andwherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween.
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Accused Products
Abstract
A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).
165 Citations
42 Claims
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1. A light emitting device comprising:
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a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface; a light absorbing multi-layered film formed over a portion of the first electrode wherein the light absorbing multi-layered film comprises a first light transmitting film, a film comprising one selected from the group consisting of Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, and Ta, and a second light transmitting film; a bank covering an end portion of the first electrode; a layer containing an organic compound formed over and in contact with a side surface of the first electrode; and a second electrode formed over the bank and the layer containing the organic compound, wherein the first electrode is a multi-layered structure, wherein a number of laminated layers of the first electrode at an end region of the first electrode is more than a number of laminated layers of the first electrode at a central region, wherein at least one of the first light transmitting film and the second light transmitting film is a nitride insulating film, and wherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light emitting device comprising:
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a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface; a light absorbing multi-layered film formed over a portion of the first electrode wherein the light absorbing multi-layered film comprises a first light transmitting film, a film comprising one selected from the group consisting of Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, and Ta, and a second light transmitting film over the portion of the first electrode; a bank covering and in contact with an end portion of the first electrode; a layer containing an organic compound formed over the first electrode; and a second electrode formed over the layer containing the organic compound, wherein at least one of the first light transmitting film and the second light transmitting film comprises metal oxide, and wherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A light emitting device comprising:
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a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface; a light absorbing multi-layered film formed over a portion of the first electrode wherein the light absorbing multi-layered film comprises at least three layers over the portion of the first electrode; a bank covering and in contact with an end portion of the first electrode; a layer containing an organic compound formed over the first electrode; and a second electrode formed over the layer containing the organic compound, wherein the first electrode is a multi-layered structure, wherein a number of laminated layers of the first electrode at an end region of the first electrode is more than a number of laminated layers of the first electrode at a central region, wherein at least one of the three layers is a light transmitting nitride insulating film, wherein at least one of the three layers comprises a metal nitride film, and wherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A light emitting device comprising:
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a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface; a light absorbing multi-layered film formed over a portion of the first electrode and comprising a silicon nitride film, a brown or black metal film, and a silicon nitride film; a bank formed over the light absorbing multi-layered film covering and in contact with an end portion of the first electrode and an end portion of the light absorbing multi-layered film; a layer containing an organic compound formed over the first electrode; and a second electrode formed over the layer containing the organic compound, wherein a reflectance of the light absorbing multi-layered film is 5% or less, and wherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37)
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38. A light emitting device comprising:
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a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface; a light absorbing multi-layered film formed over a portion of the first electrode and comprising aluminum, wherein the light absorbing multi-layered film comprises a first light transmitting film, an aluminum film, and a second light transmitting film; a bank formed over the light absorbing film covering and in contact with an end portion of the first electrode and an end portion of the light absorbing film; a layer containing an organic compound formed over the first electrode; and a second electrode formed over the layer containing the organic compound, wherein the first electrode is a multi-layered structure, wherein a number of laminated layers of the first electrode at an end region of the first electrode is more than a number of laminated layers of the first electrode at a central region, wherein at least one of the first light transmitting film and the second light transmitting film is a nitride insulating film, and wherein the second electrode is formed over the light absorbing film with the bank interposed therebetween. - View Dependent Claims (39, 40, 41, 42)
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Specification