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Light emitting device and manufacturing method thereof

  • US 7,897,979 B2
  • Filed: 06/04/2003
  • Issued: 03/01/2011
  • Est. Priority Date: 06/07/2002
  • Status: Expired due to Fees
First Claim
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1. A light emitting device comprising:

  • a first electrode electrically connected with a thin film transistor over a substrate having an insulative surface;

    a light absorbing multi-layered film formed over a portion of the first electrode wherein the light absorbing multi-layered film comprises a first light transmitting film, a film comprising one selected from the group consisting of Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, and Ta, and a second light transmitting film;

    a bank covering an end portion of the first electrode;

    a layer containing an organic compound formed over and in contact with a side surface of the first electrode; and

    a second electrode formed over the bank and the layer containing the organic compound,wherein the first electrode is a multi-layered structure, wherein a number of laminated layers of the first electrode at an end region of the first electrode is more than a number of laminated layers of the first electrode at a central region,wherein at least one of the first light transmitting film and the second light transmitting film is a nitride insulating film, andwherein the second electrode is formed over the light absorbing multi-layered film with the bank interposed therebetween.

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