Methods of fabricating dual fin structures
First Claim
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1. A method for fabricating a semiconductor device, comprising:
- forming a plurality of trenches in a substrate with at least one protruding region therebetween;
applying a mask material over the at least one protruding region without filling the plurality of trenches;
exposing a portion of an upper end of the at least one protruding region through the mask material; and
forming a pair of fins from the at least one protruding region by removing the exposed portion of the substrate at the upper end of the at least one protruding region to form a trench therein.
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Abstract
Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding region of a substrate. The dual fins may be useful in forming single-gate, double-gate or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.
13 Citations
24 Claims
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1. A method for fabricating a semiconductor device, comprising:
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forming a plurality of trenches in a substrate with at least one protruding region therebetween; applying a mask material over the at least one protruding region without filling the plurality of trenches; exposing a portion of an upper end of the at least one protruding region through the mask material; and forming a pair of fins from the at least one protruding region by removing the exposed portion of the substrate at the upper end of the at least one protruding region to form a trench therein. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a semiconductor device, comprising:
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forming a plurality of trenches in a substrate to form a plurality of protrusions therebetween; applying a mask material over the substrate and over the plurality of protrusions; exposing portions of upper ends of the plurality of protrusions by removing at least a portion of the mask material to render the remaining mask material substantially coplanar with the upper ends of the plurality of protrusions; removing substrate material from the exposed portions of the upper ends of the plurality of protrusions to form recesses between fin structures; applying a dielectric material over the substrate to form a lining on the sidewalls of the recesses; applying a conductive material over the plurality of protrusions to fill the recesses; and forming conductive lines on the fin structures on sides thereof opposite the recesses. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for fabricating a semiconductor device, comprising:
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forming a plurality of trenches in a substrate with at least one protruding region therebetween; applying a conductive material over the at least one protruding region; exposing a portion of an upper end of the at least one protruding region through the conductive material to form a mask; and forming a pair of fins from the at least one protruding region by removing the exposed portion of the substrate at the upper end of the at least one protruding region to form a trench therein.
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Specification