Shielding black reference pixels in image sensors

• US 7,920,185 B2
• Filed: 06/30/2004
• Issued: 04/05/2011
• Est. Priority Date: 06/30/2004
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Ovsiannikov, Ilia
• Primary Examiner(s): Ometz; David L
• Assistant Examiner(s): DURNFORD GESZVAIN, DILLON
• Application Number:
  US10/879,170
• Publication Number:
  US 20060012838A1
• Time in Patent Office: 2,470 Days
• Field of Search: 348/245, 250/208.1, 250/214.1
• US Class Current: 348/245
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H04N 25/621 for the control of blooming

Abstract

An image sensor having an array of pixel cells, each including a photo-conversion device. The array has first, second, and third groups of pixel cells. The first group of pixel cells receives light and the second and third groups are shielded from light. Each pixel cell of the second group is configured to output a black reference signal for determining a black level of the array. Each pixel cell of the third group has at least one first transistor coupled to the photo-conversion device, and each transistor coupled to the photo-conversion device has a gate coupled to a power supply voltage.

Claims

1. A pixel cell comprising:

a photo-conversion device; and

at least one first transistor directly connected to the photo-conversion device for dissipating charge therefrom, each first transistor having a gate driven only by a power supply voltage, wherein one first transistor comprises a first source/drain region common to a second transistor, the first source/drain region directly coupled to a gate of a source follower transistor, the second transistor further comprising a gate configured to be driven only by the power supply voltage and a second source/drain region coupled to the power supply voltage.

2. The pixel cell of claim 1, wherein there is one first transistor coupled to the photo-conversion device.

3. The pixel cell of claim 2, wherein the first transistor is one of a reset, anti-blooming, or transfer transistor.

4. A pixel cell comprising:

a photo-conversion device;

at least one first transistor coupled to the photo-conversion device for dissipating charge therefrom, each first transistor having a first source/drain region coupled to the photo-conversion device and comprising a body and a gate, the gate driven by a power supply voltage; and

a second transistor, the second transistor comprising a body and a gate, the gate configured to be driven only by a ground potential, and having a source/drain region directly connected to a column output line.

5. A method of forming a pixel cell, the method comprising the acts of:

forming a photo-conversion device;

forming at least one first transistor directly connected to the photo-conversion device;

forming connections coupling a gate of each first transistor to a power supply voltage such that the gate of each first transistor is configured to be driven only by the power supply voltage;

forming a first source/drain region of at least one first transistor to be common to a second transistor;

forming a connection directly coupling the first source/drain region to a gate of a source follower transistor;

forming the second transistor; and

forming connections coupling a gate and second source/drain region of the second transistor to the power supply such that the gate of the second transistor is configured to be driven only by the power supply voltage.

6. The method of claim 5, wherein the act of forming the at least one first transistor comprises forming at least one of a reset, transfer, and anti-blooming transistor.

7. A method of forming a pixel cell, the method comprising the acts of:

forming a photo-conversion device;

forming at least one first transistor coupled to the photo-conversion device;

forming connections coupling a gate of each first transistor to a power supply voltage such that the gate of each first transistor is driven only by the power supply voltage;

forming a second transistor comprising a body and a gate;

forming connections coupling a source/drain region of the second transistor to a column output line; and

forming a connection directly connecting the gate of the second transistor to a ground potential such that the gate of the second transistor is configured to be driven only by the ground potential.

8. A method of operating a pixel cell, the method comprising the acts of:

preventing light from reaching a photo-conversion device;

collecting charge in the photo-conversion device;

continuously operating a gate of each transistor coupled to the photo-conversion device, such that the gate is always held open during operation, each transistor directly connected to the photo-conversion device being a first transistor;

draining the charge from the photo-conversion device, wherein at least one first transistor comprises a first source/drain region common to a second transistor, the first source/drain region directly coupled to a gate of a source follower transistor; and

continuously operating a gate of the second transistor, the second transistor having a second source/drain region coupled to a power supply voltage rail and a gate connected directly only to the power supply voltage rail, wherein draining the charge comprises draining the charge to the power supply voltage rail coupled to the source/drain region of the second transistor.

9. The method of claim 8, wherein the act of continuously operating the gate of each first transistor comprises applying a power supply voltage to the gate of each first transistor.