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Multi-thickness semiconductor with fully depleted devices and photonic integration

  • US 7,927,979 B2
  • Filed: 10/27/2010
  • Issued: 04/19/2011
  • Est. Priority Date: 12/05/2008
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor device, comprising:

  • thinning a region of a semiconductor wafer upon which the device is to be formed, thereby defining a thin region and a thick region of the wafer;

    forming on the thick region one or more photonic devices and/or partially depleted electronic devices; and

    forming on the thin region one or more fully depleted electronic devices.

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