Manufacturing method of semiconductor device

• US 7,928,510 B2
• Filed: 09/18/2006
• Issued: 04/19/2011
• Est. Priority Date: 09/30/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Watanabe, Ryosuke
• Primary Examiner(s): Wilczwski; Mary
• Assistant Examiner(s): Thomas; Toniae M
• Application Number:
  US11/522,455
• Publication Number:
  US 20070077691A1
• Time in Patent Office: 1,674 Days
• Field of Search: 438/113, 438458-459, 257/347, 257/350, 257/354, 257/642, 257/E29.27
• US Class Current: 257/350
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

It is an object of the present invention to provide a manufacturing method of a semiconductor device where a semiconductor element is prevented from being damaged and throughput speed thereof is improved, even in a case of thinning or removing a supporting substrate after forming the semiconductor element over the supporting substrate. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of forming a plurality of element groups over an upper surface of a substrate; forming an insulating film so as to cover the plurality of element groups; selectively forming an opening to the insulating film which is located in a region between neighboring two element groups in the plurality of element groups to expose the substrate; forming a first film so as to cover the insulating film and the opening; exposing the element groups by removing the substrate; forming a second film so as to cover the surface of the exposed element groups; and cutting off between the plurality of element groups so as not to expose the insulating film.

Claims

1. A semiconductor device comprising:

a first insulating film;

an element group over the first insulating film, the element group containing a thin film transistor interposed between a plurality of insulating films and an antenna electrically connected to the thin film transistor;

a protective film covering the thin film transistor and the antenna; and

a second insulating film covering a top surface and a side surface of the protective film,

wherein each of the first insulating film and the second insulating film contains at least one of polypropylene, polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, and paper of a fibrous material.

2. A semiconductor device according to claim 1, wherein the semiconductor device is one of an RFID tag, an ID tag, an IC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, and a wireless chip.

3. A semiconductor device according to claim 1, wherein the protective film contains a diamond-like-carbon.

4. A semiconductor device comprising:

a first insulating film;

an element group over the first insulating film, the element group containing a thin film transistor interposed between a plurality of insulating films and an antenna electrically connected to the thin film transistor;

a protective film covering the thin film transistor and the antenna; and

a second insulating film over the protective film, wherein a portion of the second insulating film is in contact with the first insulating film,

wherein each of the first insulating film and the second insulating film contains at least one of polypropylene, polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, and paper of a fibrous material.

5. A semiconductor device according to claim 4, wherein the semiconductor device is one of an RFID tag, an ID tag, an IC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, and a wireless chip.

6. A semiconductor device according to claim 4, wherein the protective film contains a diamond-like-carbon.

7. A semiconductor device comprising:

a first insulating film;

an element group over the first insulating film, the element group containing a thin film transistor interposed between a plurality of insulating films and an antenna electrically connected to the thin film transistor;

a protective film covering the thin film transistor and the antenna; and

a second insulating film covering a top surface and a side surface of the protective film, wherein a side surface of the first insulating film is aligned with a side surface of the second insulating film,

wherein each of the first insulating film and the second insulating film contains at least one of polypropylene, polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, and paper of a fibrous material.

8. A semiconductor device according to claim 7, wherein the semiconductor device is one of an RFID tag, an ID tag, an IC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, and a wireless chip.

9. A semiconductor device according to claim 7, wherein the protective film contains a diamond-like-carbon.

10. A semiconductor device comprising:

a first insulating film;

an element group over the first insulating film, the element group containing a thin film transistor interposed between a plurality of insulating films and an antenna electrically connected to the thin film transistor;

a protective film covering the thin film transistor and the antenna; and

a second insulating film over the protective film, wherein a portion of the second insulating film is in contact with the first insulating film, and wherein a side surface of the first insulating film is aligned with a side surface of the second insulating film,

wherein each of the first insulating film and the second insulating film contains at least one of polypropylene, polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, and paper of a fibrous material.

11. A semiconductor device according to claim 10, wherein the semiconductor device is one of an RFID tag, an ID tag, an IC tag, an IC chip, an RF tag, a wireless tag, an electronic tag, and a wireless chip.

12. A semiconductor device according to claim 10, wherein the protective film contains a diamond-like-carbon.