Reflection-type mask and method of making the reflection-type mask
First Claim
1. A reflection-type mask comprising:
- a substrate;
a multilayer reflective film which is formed above the substrate, and which reflects exposure light;
a photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light;
a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains; and
a shading region having a trench formed as an etched portion from the surface of the photoabsorber layer at least to an intermediate position in the multilayer reflective film.
5 Assignments
0 Petitions
Accused Products
Abstract
To provide a reflection-type mask having a reduced shadowing effect, capable of phase shift exposure and having a shading frame of sufficient shading performance. The mask includes a substrate 11, a multilayer reflective film 12 which is formed above the substrate 11, and which reflects exposure light, a first photoabsorber layer 15 which is formed above the multilayer reflective film 12, and which absorbs the exposure light, a circuit pattern region 16 constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer 15 and an absorbing portion where the first photoabsorber layer remains, and a shading region 18 having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region 16.
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Citations
18 Claims
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1. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light; a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains; and a shading region having a trench formed as an etched portion from the surface of the photoabsorber layer at least to an intermediate position in the multilayer reflective film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a first photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light, a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the first photoabsorber layer, and an absorbing portion where the first photoabsorber layer remains; and a shading region having a second photoabsorber layer which is formed on the first photoabsorber layer, and which absorbs the exposure light. - View Dependent Claims (8)
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9. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light; a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains; and a shading region having a shading layer which is formed on the photoabsorber layer, and which is formed of tantalum (Ta) or chromium (Cr).
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10. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light; a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains; and a shading region having a denatured layer in which the multilayer reflective film is implanted with ions, and in which the crystallinity is destroyed.
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11. A reflection-type mask comprising:
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a substrate; a multilayer reflective film which is formed above the substrate, and which reflects exposure light; a photoabsorber layer which is formed above the multilayer reflective film, and which absorbs the exposure light; a circuit pattern region constituted, in conformity with a predetermined circuit pattern, of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains; and a shading region having a denatured layer in which an intermediate layer is formed at the interface between thin films constituting the multilayer reflective film.
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12. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains, by etching the photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region by etching the photoabsorber layer and at least part of the multilayer reflective film.
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13. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains, by etching the photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region, wherein an electroconductive layer is formed on the substrate after the preparation of the substrate;
the multilayer reflective film is thereafter formed on the electroconductive layer; and
the shading region is formed by etching the photoabsorber layer and the multilayer reflective film until the electroconductive layer is exposed.
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14. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a first photoabsorber layer above the multilayer reflective film; forming a second photoabsorber layer on the first photoabsorber layer after forming the first photoabsorber layer; forming a circuit pattern region constituted of an opening formed as a result of removal of the first photoabsorber layer, and an absorbing portion where the first photoabsorber layer remains, by etching the first photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region, wherein the circuit pattern region is formed by etching the first photoabsorber layer and the second photoabsorber layer in conformity with the predetermined circuit pattern, and thereafter removing the second photoabsorber layer on the first photoabsorber layer in the circuit pattern region. - View Dependent Claims (15)
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16. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains, by etching the photoabsorber layer in conformity with a predetermined circuit pattern, applying a photoresist on the first photoabsorber layer and the multilayer reflective film exposed in the opening after forming the circuit pattern region; performing patterning on the photoresist so that the photoabsorber layer in the portion in which a shading region is to be formed is exposed; forming a film for the shading layer on the photoresist and the photoabsorber layer exposed; and removing the photoresist while leaving the shading layer on the photoabsorber layer in the portion in which the shading region is to be formed.
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17. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains, by etching the photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region, wherein the shading region is formed by destroying the crystallinity of the multilayer reflective film by implanting ions so that the ions reach the multilayer reflective film from the surface of the photoabsorber layer.
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18. A method of manufacturing a reflection-type mask, comprising:
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preparing a substrate; forming a multilayer reflective film above the substrate; forming a photoabsorber layer above the multilayer reflective film; forming a circuit pattern region constituted of an opening formed as a result of removal of the photoabsorber layer, and an absorbing portion where the photoabsorber layer remains, by etching the photoabsorber layer in conformity with a predetermined circuit pattern; and forming a shading region having a reflectance with respect to the exposure light lower than that in the absorbing portion of the circuit pattern region, wherein the multilayer reflective film is formed by stacking a pair of thin films constituted of a silicon thin film and a molybdenum thin film, and the shading region is formed by irradiating the multilayer reflective film with laser so that an intermediate layer formed of a compound of silicon and molybdenum is formed at the interface between the silicon thin film and the molybdenum thin film.
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Specification