Nitride-based semiconductor light emitting device and manufacturing method thereof

• US 7,939,349 B2
• Filed: 07/27/2006
• Issued: 05/10/2011
• Est. Priority Date: 04/23/2002
• Status: Expired due to Fees

• Current Assignee: LedComm LLC (IPValuation Partners, LLC)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Koide, Norikatsu, Hata, Toshio, Fudeta, Mayuko, Kimura, Daigaku
• Primary Examiner(s): SEFER, AHMED N
• Application Number:
  US11/494,845
• Publication Number:
  US 20060267033A1
• Time in Patent Office: 1,748 Days
• Field of Search: 257 94-103, 257 13- 19, 257 76- 82, 438/22, 438/29
• US Class Current: 438/22
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Claims

1. A method of manufacturing a nitride-based semiconductor light-emitting device comprising:

providing a support substrate, a reflective layer, a p-type nitride-based semiconductor layer, a light-emitting layer, an n-type nitride-based semiconductor layer and an n-type In_aGa_1-aN (0≦

a≦

1) layer layered in this order, wherein the light-emitting layer, the n-type nitride-based semiconductor layer and the n-type In_aGa_1-aN (0≦

a≦

1) layer are formed using a growth substrate;

forming irregularities on a light extraction surface on an upper surface of said n-type In_aGa_1-aN(0≦

a≦

1) layer by removing the growth substrate; and

providing an n-type electrode on the upper surface of the n-type In_aGa_1-aN (0≦

a≦

1) layer;

wherein, the reflective layer is in ohmic contact with the p-type nitride-based semiconductor layer and functions as a p-type-use electrode; and

the p-type use electrode is a layer or a stack selected from a group consisting of a Pd layer, an Ag layer, a stack of a Pd layer and an Au layer, a stack of an Ag layer and an Au layer, and a stack of a Pd layer, an Ag layer and an Au layer.

2. The method according to claim 1, wherein the n-type In_aGa_1-aN (0≦

a≦

1) layer is a silicon-doped nitride-based semiconductor layer.

3. The method according to claim 1, wherein the support substrate comprises a nickel provided by nickel plating, a metal provided by metal plating, Au, an alloy of Au and Sn, or an electrically-conductive semiconductor.