Nonvolatile semiconductor storage apparatus and method for manufacturing the same
First Claim
1. A nonvolatile semiconductor storage apparatus comprising:
- a substrate;
an insulating layer disposed on the substrate;
a columnar semiconductor disposed perpendicular to the substrate;
a laminated film comprising;
a first insulating film disposed around the columnar semiconductor,a charge storage film disposed around the first insulating film, anda second insulating film disposed around the charge storage film;
a first conductor layer that is disposed on the insulating layer and that is in contact with the laminated film;
a first interlayer insulating layer disposed on the first conductor layer;
a second conductor layer that is disposed on the first interlayer insulating layer and that is in contact with the laminated film;
a first contact plug that is connected to the first conductor layer; and
a second contact plug that is connected to the second conductor layer;
wherein the first conductor layer comprises a first end portion that is bent upwardly in a direction perpendicular to a surface of the substrate;
wherein the second conductor layer comprises a second end portion that is bent upwardly in the direction perpendicular to a surface of the substrate;
wherein the first end portion comprises a first end face;
wherein the second end portion comprises a second end face;
wherein the first contact plug is disposed on the first end face; and
wherein the second contact plug is disposed on the second end face.
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Accused Products
Abstract
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage apparatus including: a substrate; a columnar semiconductor disposed perpendicular to the substrate; a charge storage laminated film disposed around the columnar semiconductor; a first conductor layer that is in contact with the charge storage laminated film and that has a first end portion having a first end face; a second conductor layer that is in contact with the charge storage laminated film, that is separated from the first conductor layer and that has a second end portion having a second end face; a first contact plug disposed on the first end face; and a second contact plug disposed on the second end face.
60 Citations
10 Claims
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1. A nonvolatile semiconductor storage apparatus comprising:
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a substrate; an insulating layer disposed on the substrate; a columnar semiconductor disposed perpendicular to the substrate; a laminated film comprising; a first insulating film disposed around the columnar semiconductor, a charge storage film disposed around the first insulating film, and a second insulating film disposed around the charge storage film; a first conductor layer that is disposed on the insulating layer and that is in contact with the laminated film; a first interlayer insulating layer disposed on the first conductor layer; a second conductor layer that is disposed on the first interlayer insulating layer and that is in contact with the laminated film; a first contact plug that is connected to the first conductor layer; and a second contact plug that is connected to the second conductor layer; wherein the first conductor layer comprises a first end portion that is bent upwardly in a direction perpendicular to a surface of the substrate; wherein the second conductor layer comprises a second end portion that is bent upwardly in the direction perpendicular to a surface of the substrate; wherein the first end portion comprises a first end face; wherein the second end portion comprises a second end face; wherein the first contact plug is disposed on the first end face; and wherein the second contact plug is disposed on the second end face. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification