Thin film light emitting diode

  • US 7,956,364 B2
  • Filed: 01/12/2010
  • Issued: 06/07/2011
  • Est. Priority Date: 06/26/2002
  • Status: Active Grant
First Claim
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1. A vertical topology light emitting device, comprising:

  • a conductive support structure;

    an adhesion structure over the conductive support structure;

    a semiconductor structure over the adhesion structure, wherein the semiconductor structure has a first surface, a second surface and a side surface;

    a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure is configured to reflect the light from the semiconductor structure;

    a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface;

    a passivation layer over the semiconductor structure; and

    a wavelength converting layer over the second surface of the semiconductor structure.

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