Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

  • US 7,964,881 B2
  • Filed: 08/11/2008
  • Issued: 06/21/2011
  • Est. Priority Date: 10/19/2007
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a first conductivity type semiconductor layer;

    an active layer on the first conductivity type semiconductor layer;

    a second conductivity type semiconductor layer on the active layer;

    a second electrode layer on the second conductivity type semiconductor layer;

    an insulating layer on the second electrode layer;

    a first electrode layer on the insulting layer; and

    a conductive substrate on the first electrode layer,wherein the second electrode layer has an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer, andthe first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least a part of the first conductivity type semiconductor layer.

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