Semiconductor device, data element thereof and method of fabricating the same
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- providing a first and a second conductor;
providing a conductive layer; and
forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
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Abstract
A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
14 Citations
25 Claims
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1. A method of fabricating a semiconductor device, comprising:
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providing a first and a second conductor; providing a conductive layer; and forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a data element, comprising:
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providing a conductive layer; and oxidizing a part of the conductive layer into a data storage layer by a plasma process. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first and a second conductors; a patterned dielectric layer having a through hole, disposed on the first conductor; a conductive layer filling in the through hole, wherein the second conductor is formed over the conductive layer and the patterned dielectric layer; a data storage layer formed by a plasma oxidation process; wherein the data storage layer is positioned between the conductive layer and one of the first conductor and the second conductor. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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18. A semiconductor device comprising:
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a first and a second conductors; a data storage layer formed by a plasma oxidation process; a dielectric layer having a through hole, the dielectric layer disposed between the first conductor and the second conductor; and a diode positioned in the through hole; wherein the data storage layer is positioned between the first and the second conductors and is positioned between the first conductor and the diode.
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Specification