Method of making deep junction for electrical crosstalk reduction of an image sensor

  • US 7,994,032 B2
  • Filed: 07/28/2010
  • Issued: 08/09/2011
  • Est. Priority Date: 07/10/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a semiconductor device, comprising:

  • providing a semiconductor substrate having a front surface and a back surface;

    forming a masking layer on the back surface of the semiconductor substrate;

    forming an opening in the masking layer, the opening configured to expose the semiconductor substrate within the opening;

    forming an aluminum-containing layer on the masking layer and on the semiconductor substrate within the opening; and

    driving aluminum from the aluminum-containing layer into the semiconductor substrate through the opening of the masking layer to form a junction of aluminum dopants around a sensor element that extends from the back surface without extending to the front surface.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×