Semiconductor device

• US 7,997,499 B2
• Filed: 05/25/2006
• Issued: 08/16/2011
• Est. Priority Date: 05/30/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kato, Kiyoshi
• Primary Examiner(s): FRANKLIN, JAMARA ALZAIDA
• Application Number:
  US11/919,011
• Publication Number:
  US 20090057416A1
• Time in Patent Office: 1,909 Days
• Field of Search: 235/492
• US Class Current: 235/492
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0715 the arrangement including means to regulate power transfer to the integrated circuit
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0726 the arrangement including a circuit for tuning the resonance frequency of an antenna on the record carrier
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78624 the source and the drain regions being asymmetrical
• CPC Class Codes: H04B 5/22 Capacitive coupling
• CPC Class Codes: H04B 5/77 for interrogation
• CPC Class Codes: Y02D 30/70 in wireless communication networks

Abstract

An object of the present invention is to achieve a wireless chip with high reliability, a small chip area, and low power consumption, where voltage that is generated inside is prevented from excessively increasing also in a strong magnetic field such as in the case of approaching an antenna. A resonant circuit including a MOS capacitor element that has a predetermined threshold voltage is used to achieve a wireless chip. This allows a parameter of the resonant circuit to be prevented from changing in the case where the voltage amplitude exceeds a predetermined value in a strong magnetic field so that the wireless chip can be kept far away from the resonant condition. Accordingly, generation of excessive voltage is allowed to be prevented without the use of a limiter circuit or a constant voltage generation circuit.

Claims

1. A semiconductor device comprising a resonance circuit, said resonance circuit comprising:

an N-type MOS capacitor element that has a threshold voltage in the range of −

0.1 V to −

24 V; and

an antenna electrically connected to the N-type MOS capacitor element,

wherein an absolute value of the threshold voltage of the N-type MOS capacitor element is in the range of half of a minimum operation power supply voltage to twice a maximum operation power supply voltage, and

wherein data is wirelessly transmitted and received through the antenna.

2. The semiconductor device according to claim 1, wherein a semiconductor region of the N-type MOS capacitor element includes an N-type impurity element at a concentration of 1×

10¹⁷ atoms/cm³ to 1×

10²⁰ atoms/cm³.

5. The semiconductor device according to any one of claims 1 and 3, further comprising an integrated circuit provided over a glass substrate or a flexible substrate.

6. The semiconductor device according to any one of claims 1 and 3, further comprising an integrated circuit including a thin film transistor.

7. A bill, a coin, securities, a certificate, a bearer bond, a container for wrapping, a book, a storage medium, a vehicle, food, a garment, a health product, a daily commodity, medicine, or an electronic device equipped with the semiconductor device according to any one of claims 1 and 3.

3. A semiconductor device comprising a resonance circuit, said resonance circuit comprising:

a P-type MOS capacitor element that has a threshold voltage in the range of 0.1 V to 24 V; and

an antenna electrically connected to the P-type MOS capacitor element,

wherein an absolute value of the threshold voltage of the P-type MOS capacitor element is in the range of half of a minimum operation power supply voltage to twice a maximum operation power supply voltage, and

wherein data is wirelessly transmitted and received through the antenna.

4. The semiconductor device according to claim 3, wherein a semiconductor region of the P-type MOS capacitor element includes a P-type impurity element at a concentration of 1×

10¹⁷ atoms/cm³ to 1×

10²⁰ atoms/cm³.