Image sensor element for backside-illuminated sensor

  • US 7,999,342 B2
  • Filed: 09/24/2007
  • Issued: 08/16/2011
  • Est. Priority Date: 09/24/2007
  • Status: Active Grant
First Claim
Patent Images

1. A backside-illuminated sensor comprising:

  • a semiconductor substrate having a front surface and a back surface; and

    a plurality of image sensor elements formed on the front surface of the semiconductor substrate, wherein at least one image sensor element comprises a transfer transistor and a photodetector and wherein a gate of the transfer transistor comprises a reflective layer and wherein the reflective layer of the gate substantially overlies the photodetector;

    wherein the photodetector includes a pinned-photodiode and wherein the reflective layer completely overlies the pinned-photodiode.

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