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Solid-state image sensors

  • US 8,013,927 B2
  • Filed: 05/17/2006
  • Issued: 09/06/2011
  • Est. Priority Date: 07/08/2005
  • Status: Active Grant
First Claim
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1. A solid-state image sensor, comprising:

  • a pixel on a semiconductor substrate;

    a photoelectric converter provided in the pixel to convert incident light to an electric signal; and

    a microlens situated above the photoelectric converter,wherein the microlens has a plan profile in which a direct distance from a center of the microlens to a lens edge differs with different respective angles, in the plan profile, from the center to the lens edge;

    the microlens having a bottom portion, where the bottom portion comprises a first base region and a second base region not including the first base region, the first base region being situated at locations near the lens edge, from which the direct distance is relatively long; and

    a vertical height of the first base region from an upper surface of the photoelectric converter is less than a vertical height of the second base region from the upper surface of the photoelectric converter.

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