Memory device, semiconductor device, and electronic device
First Claim
1. A memory device comprising:
- a power supply line;
a first signal line;
a second signal line;
an output terminal;
a reading circuit including a transistor and a clocked inverter; and
a memory cell including a memory element, the memory cell being electrically connected to the second signal line and the reading circuit,wherein an input terminal of the clocked inverter is electrically connected to the second signal line,wherein an output terminal of the clocked inverter is electrically connected to the output terminal,wherein the transistor comprises;
a first terminal electrically connected to the power supply line and serving as one of a source terminal and a drain terminal;
a second terminal electrically connected to the memory cell through the second signal line and serving as the other of the source terminal and the drain terminal;
a third terminal electrically connected to the first signal line and serving as a gate terminal; and
a fourth terminal,wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, andwherein an output terminal of the inverter is electrically connected to the third terminal of the transistor.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a memory device which can maintain data accurately even when memory characteristics of a memory element deteriorate over time. The memory device includes a memory cell 100, a reading circuit 103, a power supply line 104, a first signal line 105, a second signal line 102, and an output terminal 106. The memory cell 100 includes a memory element 108, the resistance value of which is changed and holds data by utilizing the resistance value of the memory element 108. The reading circuit 103 reads data held in the memory cell 100. The output terminal 106 outputs a potential of the power supply line 104 or a potential corresponding to the data held in the memory cell 100 in accordance with the resistance value of the memory element 108. The reading circuit 103 includes a transistor 109 having first to fourth terminals. The threshold voltage of the transistor 109 is controlled by supplying a potential to a channel region through the fourth terminal.
12 Citations
21 Claims
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1. A memory device comprising:
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a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, the memory cell being electrically connected to the second signal line and the reading circuit, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a first terminal electrically connected to the power supply line and serving as one of a source terminal and a drain terminal; a second terminal electrically connected to the memory cell through the second signal line and serving as the other of the source terminal and the drain terminal; a third terminal electrically connected to the first signal line and serving as a gate terminal; and a fourth terminal, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the third terminal of the transistor. - View Dependent Claims (2, 3)
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4. A memory device comprising:
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a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, and the memory cell being electrically connected to the second signal line and the reading circuit, wherein the reading circuit is electrically connected to the power supply line, the first signal line, the second signal line, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a first gate electrode; a second gate electrode; a semiconductor layer between the first and second gate electrodes, the semiconductor layer including a source region, a drain region, and a channel region between the source and drain regions; a first gate insulating film between the first gate electrode and the semiconductor layer; and a second gate insulating film between the second gate electrode and the semiconductor layer, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the first gate electrode of the transistor. - View Dependent Claims (5, 6)
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7. A memory device comprising:
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a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, and the memory cell being electrically connected to the second signal line and the reading circuit, wherein the reading circuit is electrically connected to the power supply line, the first signal line, the second signal line, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a semiconductor substrate including a first impurity region serving as one of a source region and a drain region, a second impurity region serving as the other of the source region and the drain region, a channel region between the first and second impurity regions, and a third impurity region; and a gate electrode over the channel region with a gate insulating film interposed therebetween, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the gate electrode of the transistor. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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an antenna; a high frequency circuit electrically connected to the antenna; and a logic circuit comprising a memory device, electrically connected to the high frequency circuit, the memory device comprising; a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, the memory cell being electrically connected to the second signal line and the reading circuit, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a first terminal electrically connected to the power supply line and serving as one of a source terminal and a drain terminal; a second terminal electrically connected to the memory cell through the second signal line and serving as the other of the source terminal and the drain terminal; a third terminal electrically connected to the first signal line and serving as a gate terminal; and a fourth terminal, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the third terminal of the transistor. - View Dependent Claims (11, 12, 13)
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14. A semiconductor device comprising:
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an antenna; a high frequency circuit electrically connected to the antenna; and a logic circuit comprising a memory device, electrically connected to the high frequency circuit, the memory device comprising; a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, the memory cell being electrically connected to the second signal line and the reading circuit, wherein the reading circuit is electrically connected to the power supply line, the first signal line, the second signal line, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a first gate electrode; a second gate electrode; a semiconductor layer between the first and second gate electrodes, the semiconductor layer including a source region, a drain region, and a channel region between the source and drain regions; a first gate insulating film between the first gate electrode and the semiconductor layer; and a second gate insulating film between the second gate electrode and the semiconductor layer, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the first gate electrode of the transistor. - View Dependent Claims (15, 16, 17)
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18. A semiconductor device comprising:
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an antenna; a high frequency circuit electrically connected to the antenna; and a logic circuit comprising a memory device, electrically connected to the high frequency circuit, the memory device comprising; a power supply line; a first signal line; a second signal line; an output terminal; a reading circuit including a transistor and a clocked inverter; and a memory cell including a memory element, the memory cell being electrically connected to the second signal line and the reading circuit, wherein the reading circuit is electrically connected to the power supply line, the first signal line, the second signal line, wherein an input terminal of the clocked inverter is electrically connected to the second signal line, wherein an output terminal of the clocked inverter is electrically connected to the output terminal, wherein the transistor comprises; a semiconductor substrate including a first impurity region serving as one of a source region and a drain region, a second impurity region serving as the other of the source region and the drain region, a channel region between the first and second impurity regions, and a third impurity region; and a gate electrode over the channel region with a gate insulating film interposed therebetween, wherein the reading circuit comprises an inverter, wherein an input terminal of the inverter is electrically connected to the first signal line, and wherein an output terminal of the inverter is electrically connected to the gate electrode of the transistor. - View Dependent Claims (19, 20, 21)
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Specification