Method for fabricating light emitting diode
First Claim
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1. A method of fabricating a light emitting diode, comprising:
- providing a carbon nanotube structure and a substrate having a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate;
laying the carbon nanotube structure on the second semiconductor layer;
placing a first electrode on the carbon nanotube structure;
exposing a portion of the first semiconductor layer; and
placing a second electrode on the exposed portion of the first semiconductor layer.
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Abstract
A method of fabricating a light emitting diode includes the following steps. A substrate is provided and a first semiconductor layer, an active layer, and a second semiconductor layer are placed on the substrate. A carbon nanotube structure is provided and the carbon nanotube structure is lie on the second semiconductor layer. A first electrode is formed on the carbon nanotube structure. A portion of the first semiconductor layer is exposed and a second electrode is formed on the exposed portion of the first semiconductor layer to obtain the light emitting diode.
28 Citations
18 Claims
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1. A method of fabricating a light emitting diode, comprising:
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providing a carbon nanotube structure and a substrate having a first semiconductor layer, an active layer, and a second semiconductor layer on the substrate; laying the carbon nanotube structure on the second semiconductor layer; placing a first electrode on the carbon nanotube structure; exposing a portion of the first semiconductor layer; and placing a second electrode on the exposed portion of the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of fabricating a light emitting diode, comprising:
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providing a carbon nanotube structure, a substrate having a first semiconductor layer, an active layer, and a second semiconductor layer, formed thereon; applying the carbon nanotube structure on the second semiconductor layer; affixing a metal layer on the carbon nanotube structure; exposing a portion of the first semiconductor layer; and placing a first electrode on the metal layer and a second electrode on the exposed portion of the first semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification