Method of depositing Ge-Sb-Te thin film
First Claim
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1. A method of depositing a Ge—
- Sb—
Te thin film, comprising;
a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; and
a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged,wherein the reaction gas comprises NH3.
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Abstract
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.
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Citations
16 Claims
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1. A method of depositing a Ge—
- Sb—
Te thin film, comprising;a Ge—
Sb—
Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—
Sb—
Te thin film on the wafer; anda reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed and purged, wherein the reaction gas comprises NH3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- Sb—
Specification