Plasma processing apparatus and plasma processing method
First Claim
1. A plasma processing apparatus comprising:
- a processing vessel capable of being vacuum evacuated;
a first electrode disposed in the processing vessel to be in a state electrically isolated from the processing vessel via an insulating member or a space;
a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, for supporting a substrate to be processed;
a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and
a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space,wherein an electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the plasma generated in the processing space,wherein a vacuum space separated from the processing space is formed between the processing vessel and a rear surface of the first electrode when viewed from the second electrode,wherein the vacuum space includes a ceiling portion that faces the rear surface of the first electrode,wherein a first insulator is disposed in the vacuum space to cover at least the ceiling portion of the vacuum space.
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Accused Products
Abstract
A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
14 Citations
16 Claims
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1. A plasma processing apparatus comprising:
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a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel to be in a state electrically isolated from the processing vessel via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, for supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space, wherein an electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the plasma generated in the processing space, wherein a vacuum space separated from the processing space is formed between the processing vessel and a rear surface of the first electrode when viewed from the second electrode, wherein the vacuum space includes a ceiling portion that faces the rear surface of the first electrode, wherein a first insulator is disposed in the vacuum space to cover at least the ceiling portion of the vacuum space. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification