Plasma processing apparatus and plasma processing method

  • US 8,034,213 B2
  • Filed: 03/30/2007
  • Issued: 10/11/2011
  • Est. Priority Date: 03/30/2006
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • a processing vessel capable of being vacuum evacuated;

    a first electrode disposed in the processing vessel to be in a state electrically isolated from the processing vessel via an insulating member or a space;

    a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, for supporting a substrate to be processed;

    a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and

    a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space,wherein an electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the plasma generated in the processing space,wherein a vacuum space separated from the processing space is formed between the processing vessel and a rear surface of the first electrode when viewed from the second electrode,wherein the vacuum space includes a ceiling portion that faces the rear surface of the first electrode,wherein a first insulator is disposed in the vacuum space to cover at least the ceiling portion of the vacuum space.

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