Solid-state image capturing device, image capturing device, and manufacturing method of solid-state image capturing device

• US 8,035,067 B2
• Filed: 05/04/2009
• Issued: 10/11/2011
• Est. Priority Date: 10/04/2006
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Toda, Atsushi
• Primary Examiner(s): LEE, JOHN R
• Application Number:
  US12/435,236
• Publication Number:
  US 20090215220A1
• Time in Patent Office: 890 Days
• Field of Search: 438/57, 438/60, 438/75, 438/87, 438/369, 438/376, 250/208.1
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14843 Interline transfer
• CPC Class Codes: H01L 31/035281 Shape of the body

Abstract

A solid-state image capturing device, includes a semiconductor board, upon which same semiconductor board are disposed in a predetermined order: a first detecting unit for detecting a first wavelength region component within an electromagnetic wave; and a second detecting unit for detecting a second wavelength region component which is longer wavelength side than at least the first wavelength region component, wherein in the depth direction from the surface of the semiconductor board, a valid region where a first electroconductive type dopant of the second detecting unit is formed reaches a portion deeper than a valid region where a first electroconductive type dopant of the first detecting unit is formed.

Claims

1. A manufacturing method for manufacturing a solid-state imaging device, comprising:

forming a control film that restricts an implantation depth of a first type dopant, the control film being formed over a semiconductor substrate at a position corresponding to a first detecting unit that is configured to detect a visible wavelength component;

forming an opening in said control film at a position corresponding to a second detecting unit that is configured to detect an infrared wavelength component; and

irradiating said semiconductor substrate with said first type dopant, wherein said first detecting unit and said second detecting unit each having a different active region are formed.

2. The manufacturing method according to claim 1, wherein both detecting units are subjected to modulation doping by changing an irradiation intensity of said first electroconductive type dopant gradually, whereby the deeper from the surface of said semiconductor substrate, the lower the concentration of said dopant.

3. A manufacturing method for a solid-state image device, comprising:

forming a control film configured to restrict the implantation depth of a first type dopant, the control film being formed over a semiconductor substrate at a position corresponding to a first detecting unit for detecting a visible wavelength component;

forming an opening in said control film at a position corresponding to a second detecting unit for detecting an infrared wavelength component;

and irradiating said semiconductor substrate with said first type dopant;

wherein said second detecting unit is formed with portions that are located deeper than said first detecting unit.

4. The manufacturing method according to claim 3, wherein there are several first detecting units to detect a visible wavelength region;

and

said several first detecting units are at a same depth.

5. The manufacturing method according to claim 3, wherein both detecting units are subjected to modulation doping by changing the irradiation intensity of said first type dopant gradually, whereby the deeper from the surface of said substrate, the lower thr concentration of said dopant.