Semiconductor integrated circuit device
First Claim
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1. A semiconductor integrated circuit device comprising:
- an amplification portion including a first transistor configured to inversely amplify an input signal inputted to a gate and output the inversely amplified input signal from a drain;
a cascode current source including the first transistor, a second transistor having a drain connected to a source of the first transistor and a source connected to a reference potential point to supply a bias current to the first transistor, a third transistor having a gate to which only a DC component out of an AC component and the DC component included in a voltage applied to the gate of the first transistor is applied, a fourth transistor having a gate connected to a gate of the second transistor, and a current source, and configured to control the bias current based on a current flowing into the current source; and
a first element portion configured to block an AC signal and pass through a DC signal between the drain of the first transistor and the gates of the first and third transistors.
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Abstract
A semiconductor integrated circuit device constituting an inverting amplifier employs a cascode current source as a current source. In the semiconductor integrated circuit device, a high-potential-side transistor of the cascode current source and a low-potential-side transistor constituting an amplification portion are shared. The configuration can not only make an output impedance of the cascode current source high and improve current source characteristics but also make a minimum potential at a minimum potential point of the amplification portion low and ensure a sufficient power supply voltage margin.
3 Citations
16 Claims
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1. A semiconductor integrated circuit device comprising:
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an amplification portion including a first transistor configured to inversely amplify an input signal inputted to a gate and output the inversely amplified input signal from a drain; a cascode current source including the first transistor, a second transistor having a drain connected to a source of the first transistor and a source connected to a reference potential point to supply a bias current to the first transistor, a third transistor having a gate to which only a DC component out of an AC component and the DC component included in a voltage applied to the gate of the first transistor is applied, a fourth transistor having a gate connected to a gate of the second transistor, and a current source, and configured to control the bias current based on a current flowing into the current source; and a first element portion configured to block an AC signal and pass through a DC signal between the drain of the first transistor and the gates of the first and third transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor integrated circuit device comprising:
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an amplification portion having a first transistor configured to inversely amplify an input signal inputted to a gate and output the inversely amplified input signal from a drain; a second transistor having a drain connected to a source of the first transistor and a source connected to a reference potential point to supply a bias current to the first transistor; a cascode current source composed of an eighth transistor and a ninth transistor which have same characteristics as the first and second transistors, respectively, a 10th transistor having a gate connected to a gate of the eighth transistor, an 11th transistor having a gate connected to a gate of the ninth transistor, and a current source, and configured to control the bias current based on a current flowing into the current source; and a first element portion configured to block an AC signal and pass through a DC signal between the drain and the gate of the first transistor. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification