Method for manufacturing semiconductor device, semiconductor device and electronic appliance

• US 8,048,771 B2
• Filed: 11/21/2008
• Issued: 11/01/2011
• Est. Priority Date: 11/27/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sakurada, Yujiro, Yokoi, Tomokazu
• Primary Examiner(s): Smith; Bradley K
• Application Number:
  US12/275,840
• Publication Number:
  US 20090134397A1
• Time in Patent Office: 1,075 Days
• Field of Search: 438/151, 438/166, 438/455, 438/458
• US Class Current: 438/458
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795

Abstract

A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating layer over a substrate;

forming a non-single-crystal semiconductor layer over the insulating layer;

irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;

attaching the non-single-crystal semiconductor layer and the single crystal semiconductor substrate to each other;

separating the single crystal semiconductor substrate at the damaged region to form a single crystal semiconductor layer over a first portion of the non-single-crystal semiconductor layer; and

forming a first gate electrode over the non-single-crystal semiconductor layer in a pixel region and a second gate electrode over the single crystal semiconductor layer in a driver circuit region after the separation of the single crystal semiconductor substrate,

wherein the first gate electrode and the second gate electrode are formed in the same process.

2. The method for manufacturing a semiconductor device according to claim 1, wherein before formation of the first gate electrode in the pixel region and before formation of the second gate electrode in the driver circuit region, the non-single-crystal semiconductor layer and the single crystal semiconductor layer are irradiated with laser light, whereby the non-single-crystal semiconductor layer is changed to a microcrystalline semiconductor or a polycrystalline semiconductor and surface planarity of the single crystal semiconductor layer is improved.

3. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating layer over a substrate;

forming a non-single-crystal semiconductor layer over the first insulating layer;

forming a second insulating layer over a surface of a single crystal semiconductor substrate;

irradiating the single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;

attaching the non-single-crystal semiconductor layer and the second insulating layer to each other;

separating the single crystal semiconductor substrate at the damaged region to form a single crystal semiconductor layer over a first portion of the non-single-crystal semiconductor layer; and

forming a first gate electrode over the non-single-crystal semiconductor layer in a pixel region and a second gate electrode over the single crystal semiconductor layer in a driver circuit region after the separation of the single crystal semiconductor substrate,

wherein the first gate electrode and the second gate electrode are formed in the same process.

4. The method for manufacturing a semiconductor device according to claim 3,

wherein before formation of the first gate electrode in the pixel region and before formation of the second gate electrode in the driver circuit region, the non-single-crystal semiconductor layer and the single crystal semiconductor layer are irradiated with laser light, whereby the non-single-crystal semiconductor layer is changed to a microcrystalline semiconductor or a polycrystalline semiconductor and surface planarity of the single crystal semiconductor layer is improved.