Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices

  • US 8,071,450 B2
  • Filed: 01/16/2009
  • Issued: 12/06/2011
  • Est. Priority Date: 10/29/1993
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • preparing a semiconductor wafer with a substrate of a first conductivity type;

    forming a first epitaxial layer of the first conductivity type on the substrate, the first epitaxial layer having a first thickness;

    growing a first oxide layer on the first epitaxial layer;

    masking the first oxide layer;

    ion implanting to create at least one first embedded region of a second conductivity type in the first epitaxial layer;

    removing the first oxide layer;

    forming a second epitaxial layer of the first conductivity type on the first epitaxial layer, the second epitaxial layer having a second thickness that is greater than the first thickness minus a thickness equal to a thickness, in a direction extending away from the substrate, of the at least one first embedded region of the second conductivity type;

    growing a second oxide layer on the second epitaxial layer;

    masking the second oxide layer;

    ion implanting to create at least one second embedded region of a second conductivity type in the second epitaxial layer; and

    removing the second oxide layer.

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