×

Method of fabrication of AI/GE bonding in a wafer packaging environment and a product produced therefrom

  • US 8,084,332 B2
  • Filed: 07/31/2008
  • Issued: 12/27/2011
  • Est. Priority Date: 03/18/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method for providing a wafer, the method comprising:

  • providing a first substrate including a microelectromechanical systems (MEMS) feature and a patterned, germanium layer, the patterned, germanium layer being an exposed layer on the first substrate;

    providing a second substrate including a patterned, aluminum layer and an electrical contact, the patterned, aluminum layer being an exposed layer on the second substrate;

    bonding the patterned, germanium layer of the first substrate to the patterned, aluminum layer of the second substrate to create an electrical and mechanical bond between the first substrate and the second substrate; and

    using a forming gas to deoxidize a bonding surface of the patterned, aluminum layer of the first substrate and a bonding surface of the patterned, germanium layer of the second substrate.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×