MOS device with integrated schottky diode in active region contact trench
First Claim
1. A semiconductor device formed on a semiconductor substrate, comprising:
- a drain region including an epitaxial layer; and
an active region comprising;
a body disposed in the epitaxial layer, having a body top surface and a body bottom surface;
a source embedded in the body, extending from the body top surface into the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench that includes a first portion having a first bottom surface and a second portion having a second bottom surface, wherein the first bottom surface is positioned in the body, and the second bottom surface is positioned in the drain region; and
an active region contact electrode disposed within the active region contact trench.
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Accused Products
Abstract
A semiconductor device is formed on a semiconductor substrate. The device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region comprises a body disposed in the epitaxial layer, having a body top surface and a body bottom surface, a source embedded in the body, extending from the body top surface into the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source and at least part of the body into the drain, wherein the active region contact trench is shallower than the body bottom surface, and an active region contact electrode disposed within the active region contact trench.
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Citations
9 Claims
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1. A semiconductor device formed on a semiconductor substrate, comprising:
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a drain region including an epitaxial layer; and an active region comprising; a body disposed in the epitaxial layer, having a body top surface and a body bottom surface; a source embedded in the body, extending from the body top surface into the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench that includes a first portion having a first bottom surface and a second portion having a second bottom surface, wherein the first bottom surface is positioned in the body, and the second bottom surface is positioned in the drain region; and an active region contact electrode disposed within the active region contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification