Color EL display and method for producing the same

• US 8,098,006 B2
• Filed: 12/03/2007
• Issued: 01/17/2012
• Est. Priority Date: 12/04/2006
• Status: Active Grant

• Current Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Original Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Inventors: Ishizaki, Mamoru, Sekine, Norimasa, Ito, Manabu, Kitazume, Eiichi
• Primary Examiner(s): Hines, Anne
• Assistant Examiner(s): STERN, JACOB R
• Application Number:
  US11/999,141
• Publication Number:
  US 20080129195A1
• Time in Patent Office: 1,506 Days
• Field of Search: None
• US Class Current: 313/504
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters on a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein a process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

Claims

1. A color EL display, comprising:

a transparent substrate;

color filters formed on the transparent substrate;

an over coating layer formed on and covering a whole of the color filters to be planarized,

a thin film transistor circuit directly formed on the over coating layer;

an organic EL layer formed on the thin film transistor circuit;

and

a common electrode formed on the organic EL layer,

wherein the thin film transistor circuit is substantially transparent and comprises a plurality of thin film transistors,

wherein each of the plurality of the thin film transistors comprises a gate electrode, a source electrode, a drain electrodes a semiconductor layer and a pixel electrode,

wherein the semiconductor layer is formed of an oxide semiconductor containing at least any one of an oxide of In, Ga, Zn, Sn and Mg,

and

wherein the organic EL layer comprises a hole transport layer directly formed on a whole surface of the pixel electrodes of said plurality of thin film transistors and a white light-emitting layer formed on the hole transport layer,

and

wherein the thin film transistor circuit comprises two or more semiconductor layers and one insulating layer,

wherein the one insulating layer is between the two or more semiconductor layers,

and

wherein one of the two or more semiconductor layers is formed above the one insulating layer and the other of the two or more semiconductor layers is formed below the one insulating layer.

2. The color EL display according to claim 1,

wherein said plurality of thin film transistors comprise at least a scanning thin film transistor and a driving thin film transistor,

wherein a semiconductor layer of the scanning thin film transistor and a semiconductor layer of the driving thin film transistor respectively belong to different layers formed so as to overlap with each other above and below.

3. The color EL display according to claim 1,

wherein the thin film transistor circuit further comprises a plurality of insulating layers, a plurality of electrode layers and a plurality of semiconductor layers,

and

wherein said a plurality of insulating layers, said a plurality of electrode layers or said a plurality of semiconductor layers are directly formed on the over coating layer of the color filters.