Gallium nitride materials and methods

CAFC
  • US 8,105,921 B2
  • Filed: 12/24/2008
  • Issued: 01/31/2012
  • Est. Priority Date: 12/14/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of producing a semiconductor material comprising:

  • forming a compositionally-graded transition layer over a silicon substrate; and

    forming a gallium nitride material layer over the transition layer;

    wherein a composition of said transition layer at a top surface thereof substantially matches a composition of said gallium nitride material layer at a bottom surface thereof.

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