Power semiconductor component with a low on-state resistance

• US 8,110,868 B2
• Filed: 05/17/2006
• Issued: 02/07/2012
• Est. Priority Date: 07/27/2005
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Willmeroth, Armin, Mauder, Anton, Pfirsch, Frank Dieter, Sedlmaier, Stefan
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Roland, Christopher M
• Application Number:
  US11/435,979
• Publication Number:
  US 20070023830A1
• Time in Patent Office: 2,092 Days
• Field of Search: 257/328, 257/341, 257/E29.012, 257/E29.257, 257/E21.418
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4916 the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

Claims

1. A semiconductor component having a semiconductor body comprising:

a drift zone of a first conductivity type;

a drift control zone composed of a semiconductor material which is at least partly arranged adjacent to the drift zone;

a body zone which is arranged adjacent to the drift zone;

a storage capacitance coupled between the drift control zone and the body zone;

an accumulation dielectric which is arranged between the drift zone and the drift control zone;

with a quotient of a net dopant charge in the entire volume of the drift control zone, which is adjacent to the accumulation dielectric in a direction at right angles to the accumulation dielectric, divided by the area of the accumulation dielectric being less than the breakdown charge of the semiconductor material in the drift control zone;

a first connecting zone of the first conductivity type which is more heavily doped than the drift zone, wherein the drift control zone is connected to the first connecting zone, and the drift zone is arranged between the body zone and a drain zone; and

wherein the drift control zone is coupled to the drain zone via a diode that is configured to prevent a discharge of the storage capacitance to the drain zone when the semiconductor component is in an on state.

2. The semiconductor component according to claim 1, in which the drift control zone is of the first conductivity type.

3. The semiconductor component according to claim 1, in which the drift control zone and the drift zone have the same net dopant concentration.

4. The semiconductor component according to claim 1, in which the drift zone and the drift control zone have the same dopant concentration profile in a direction parallel to the accumulation dielectric.

5. The semiconductor component according to claim 1, in which the first connecting zone extends in places as far as the drift control zone.

6. The semiconductor component according to claim 1, which is in the form of a MOSFET and has a gate electrode which is connected to the drift control zone via an electrode.

7. A semiconductor component having a semiconductor body comprising:

a drift zone of a first conductivity type;

a drift control zone composed of a semiconductor material which is at least partly arranged adjacent to the drift zone;

an accumulation dielectric which is arranged between the drift zone and the drift control zone;

with a quotient of a net dopant charge in the entire volume of the drift control zone, which is adjacent to the accumulation dielectric in a direction at right angles to the accumulation dielectric, divided by the area of the accumulation dielectric being less than the breakdown charge of the semiconductor material in the drift control zone;

which is in the form of a MOSFET, which has a source zone, a drain zone, a body zone which is formed between the drift zone and the source zone, as well as a gate electrode, which is isolated from the semiconductor body and is arranged adjacent to the body zone;

a storage capacitance coupled between the drift control zone and the source zone; and

a diode connected between the drain zone and the drift control zone, wherein the diode is connected such that it prevents the storage capacitance from being discharged to the drain zone when the component is in an on state.

8. The semiconductor component according to claim 7, which is in the form of a trench MOSFET, in which the gate electrode is formed in at least one trench which extends into the semiconductor body in the vertical direction.

9. The semiconductor component according to claim 7, in which a second connecting zone is connected to the drift control zone, has complementary doping to the drift control zone and is arranged adjacent to the body zone, separated by the accumulation dielectric.

10. The semiconductor component according to claim 9, in which the second connecting zone is coupled to the source zone.

11. The semiconductor component according to claim 9, in which the second connecting zone is coupled to the source zone via a diode.

12. The semiconductor component according to claim 9, in which a semiconductor zone of the second conductivity type is provided, which is more heavily doped than the body zone, is connected to the body zone, and is arranged adjacent to the second connecting zone, at least in places.

13. The semiconductor component according to claim 7, in which the drift control zone has a connecting zone, which is isolated from the gate electrode, at a source end.