Substrate processing method and substrate processing apparatus
First Claim
Patent Images
1. A substrate processing method for processing a substrate having a thermally-oxidized film formed by thermal oxidation processing and a nitride film in a chamber, comprising:
- an oxygen-containing plasma contact step of causing oxygen-containing plasma to be in contact with the substrate; and
an HF gas supply step of supplying HF gas toward the substrate with which the oxygen-containing plasma has been in contact,wherein the nitride film comprises a silicon nitride film and is changed to a silicon monoxide film in said oxygen-containing plasma contact step, andwherein, in said HF gas supply step, water molecules are removed from the chamber in a state in which two types of silicon oxide films, which respectively corresponds to the thermally-oxidized film and the silicon monoxide film and have different densities, exist contemporaneously in such a manner that water molecules remain in a silicon oxide film having less density between the two types of silicon oxide films, and the HF gas is supplied to selectively remove the silicon oxide film having less density.
1 Assignment
0 Petitions
Accused Products
Abstract
A substrate processing method capable of selectively removing a nitride film. Oxygen plasma containing plasmarized oxygen gas is made to be in contact with a silicon nitride film, which is made of SiN, of a wafer to thereby cause the silicon nitride film to be changed to a silicon monoxide film. The silicon monoxide film is selectively etched by hydrofluoric acid generated from HF gas supplied toward the silicon monoxide film.
5 Citations
9 Claims
-
1. A substrate processing method for processing a substrate having a thermally-oxidized film formed by thermal oxidation processing and a nitride film in a chamber, comprising:
-
an oxygen-containing plasma contact step of causing oxygen-containing plasma to be in contact with the substrate; and an HF gas supply step of supplying HF gas toward the substrate with which the oxygen-containing plasma has been in contact, wherein the nitride film comprises a silicon nitride film and is changed to a silicon monoxide film in said oxygen-containing plasma contact step, and wherein, in said HF gas supply step, water molecules are removed from the chamber in a state in which two types of silicon oxide films, which respectively corresponds to the thermally-oxidized film and the silicon monoxide film and have different densities, exist contemporaneously in such a manner that water molecules remain in a silicon oxide film having less density between the two types of silicon oxide films, and the HF gas is supplied to selectively remove the silicon oxide film having less density. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
Specification