Method and structure for thick layer transfer using a linear accelerator
First Claim
1. A method for fabricating a free standing thickness of materials using one or more semiconductor substrates, comprising:
- providing a semiconductor substrate having a surface region and a thickness;
subjecting the surface region of the semiconductor substrate to a first plurality of energetic particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to define a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature;
subjecting the semiconductor substrate to a treatment process;
subjecting the surface region of the semiconductor substrate to a second plurality of energetic particles generated using the linear accelerator, the second plurality of energetic particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level, the semiconductor substrate being maintained at a second temperature,wherein the second temperature is higher than the first temperature and greater than 350 Degrees Celsius; and
freeing the thickness of material to be detached using a cleaving process, wherein a surface of the material to be detached that faces away from a remaining portion of the semiconductor substrate is not bonded to a support member during the cleaving process.
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Accused Products
Abstract
Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.
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Citations
25 Claims
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1. A method for fabricating a free standing thickness of materials using one or more semiconductor substrates, comprising:
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providing a semiconductor substrate having a surface region and a thickness; subjecting the surface region of the semiconductor substrate to a first plurality of energetic particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to define a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature; subjecting the semiconductor substrate to a treatment process; subjecting the surface region of the semiconductor substrate to a second plurality of energetic particles generated using the linear accelerator, the second plurality of energetic particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level, the semiconductor substrate being maintained at a second temperature, wherein the second temperature is higher than the first temperature and greater than 350 Degrees Celsius; and freeing the thickness of material to be detached using a cleaving process, wherein a surface of the material to be detached that faces away from a remaining portion of the semiconductor substrate is not bonded to a support member during the cleaving process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for forming a free standing thickness of layer transferred material, the method comprising:
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providing a crystalline substrate material having a surface region; introducing a plurality of first particles at a first dose range and within a first temperature range, whereupon the first dose range being less than an amount sufficient to cause the plurality of first particles to be permanently disposed in the crystalline substrate material at an accumulation region, through the surface region to the accumulation region of the crystalline substrate material to form an implant profile having a peak concentration and a base to form the accumulation region, the plurality of first particles causing a plurality of defects in the crystalline substrate material in the accumulation region, the accumulation region being defined by a depth greater than about 20 microns beneath the surface region and a slice of crystalline material to be detached between the accumulation region and the surface region; performing a treatment process on the crystalline substrate material to cause formation of a plurality of substantially permanent defects that have been quenched in the crystalline substrate material from the first particles in the accumulation region; and introducing a plurality of second particles at a second dose range and a second temperature range into the accumulation region to increase an internal stress in the accumulation region to cause a portion of the accumulation region to be cleavable, wherein the second temperature range is higher than the first temperature range and does not include a temperature that is less than or equal to 350 Degrees Celsius; forming a free standing thickness of crystalline material by detaching a thickness of crystalline material from a remaining portion of the crystalline substrate material, wherein a surface of the free standing thickness of crystalline material that faces away form a remaining portion of the crystalline substrate is free from a support member during the detaching. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A method for forming a free standing layer of semiconductor material, the method comprising:
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providing a bulk semiconductor material having a surface; implanting through the surface and into the bulk material, a first plurality of particles output by a linear accelerator at an energy of between about 0.5-12 MeV, to form a cleave region comprising a plurality of gettering sites, a distance between the cleave region and the surface defining a thickness of a semiconductor material to be detached, the bulk semiconductor material being maintained at a first temperature; introducing a second plurality of a high energy particles into the cleave region, the bulk semiconductor material being maintained at a second temperature that is higher than the first temperature and greater than 350 Degrees Celsius; and freeing the thickness of semiconductor material to be detached using a controlled cleaving process, a surface of the thickness of semiconductor material to be detached that faces away from a remaining portion of the semiconductor substrate being free from a support member during the controlled cleaving. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification