Adaptively tunable antennas incorporating an external probe to monitor radiated power

• US 8,125,399 B2
• Filed: 01/16/2007
• Issued: 02/28/2012
• Est. Priority Date: 01/14/2006
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Paratek Microwave Incorporated (Blackberry Limited)
• Inventors: McKinzie, William E., Mendolia, Greg, Manssen, Keith
• Primary Examiner(s): MANCUSO, HUEDUNG XUAN CAO
• Application Number:
  US11/653,644
• Publication Number:
  US 20070285326A1
• Time in Patent Office: 1,869 Days
• Field of Search: 343745-746, 343/702, 343/700.MS
• US Class Current: 343/746
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 5/321 within a radiating element or between connected radiating elements
• CPC Class Codes: H01Q 9/0407 Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40
• CPC Class Codes: H01Q 9/0421 with a shorting wall or a shorting pin at one end of the element H01Q9/0414 takes precedence
• CPC Class Codes: H01Q 9/145 by varying the electrical length

Abstract

An embodiment of the present invention an apparatus, comprising an apparatus, comprising an adaptively-tuned antenna including a variable reactance network connected to the antenna, an RF field probe located near the antenna, an RF detector to sense voltage from the field probe, a controller that monitors the RF voltage and supplies control signals to a driver circuit and wherein the driver circuit converts the control signals to bias signals for the variable reactance network.

Claims

1. An apparatus, comprising:

an RF field probe located near an antenna, wherein to a variable reactance network is connected on the antenna, and wherein the variable reactance network comprises at least one electrically tunable variable capacitor;

an RF detector to sense RF voltage from said RF field probe, the RF voltage being generated based on radiated power of the antenna;

wherein a controller monitors said RF voltage, generates control signals based on the monitored RF voltage and supplies the control signals to a driver circuit, and

wherein said driver circuit converts said control signals to bias voltages that are used by said variable reactance network for tuning the antenna via applying the bias voltages to the at least one electrically tunable variable capacitor to adjust a capacitance of the at least one electrically tunable variable capacitor.

2. The apparatus of claim 1, wherein said variable reactance network comprises a shunt capacitance.

3. The apparatus of claim 1, wherein said variable reactance network comprises a series capacitance.

4. The apparatus of claim 1, wherein the capacitance of the at least one electrically tunable variable capacitor is adjusted differently for transmit and receive modes of a communication device comprising the antenna.

5. The apparatus of claim 1, wherein the antenna comprises a planar inverted F antenna.

6. The apparatus of claim 1, wherein the adjusting of the capacitance of the at least one electrically tunable variable capacitor causes the monitored RF voltage to increase.

7. The apparatus of claim 1, wherein the variable reactance network comprises one or more inductors.

8. The apparatus of claim 7, wherein the one or more inductors comprise one of one or more variable impedance inductors and one or more switched inductors each having a fixed impedance.

9. The apparatus of claim 1, wherein the variable reactance network comprises at least one of semiconductor varactors, micro-electro-mechanical systems (MEMS) varactors, MEMS switched reactive elements, semiconductor switched reactive elements, and ferroelectric capacitors.

10. An apparatus for tuning an antenna, the apparatus comprising:

a variable reactance network coupled to said antenna, the variable reactance network comprising at least one electrically tunable variable capacitor,

wherein a control system senses an RF voltage at a field probe and adjusts a capacitance of the at least one electrically tunable variable capacitor of said variable reactance network based on the sensed RF voltage to increase the RF voltage, wherein the capacitance of the at least one electrically tunable variable capacitor is adjusted by applying a bias voltage to the at least one electrically tunable variable capacitor.

11. The apparatus of claim 10, wherein the control system comprises a driver circuit for generating the bias voltage.

12. The apparatus of claim 11, wherein the one or more inductors comprise one of one or more variable impedance inductors and one or more switched inductors each having a fixed impedance.

13. The apparatus of claim 10, wherein the variable reactance network comprises at least one of semiconductor varactors, micro-electro-mechanical systems (MEMS) varactors, MEMS switched reactive elements, semiconductor switched reactive elements, and ferroelectric capacitors.

14. An apparatus, comprising:

an RF probe positioned in proximity to an antenna from which is radiated a signal; and

an RF detector to sense an RF voltage from the antenna by way of the RF probe, the RF voltage being generated based on the radiated signal of the antenna,

wherein a controller monitors said RF voltage, generates control signals based on the monitored RF voltage and supplies the control signals to a driver circuit, wherein said driver circuit converts control signals to one of bias voltage or bias current for a variable reactance network coupled to said antenna for tuning the antenna via applying the one of the bias voltage or bias current to a variable reactance component of the variable reactance network to adjust the variable reactance component over a range of reactance values.

15. The apparatus of claim 14, wherein the variable reactance network comprises one of a shunt capacitance or a series capacitance.

16. The apparatus of claim 14, wherein the variable reactance network is connected on the antenna.

17. The apparatus of claim 14, wherein the RF probe is positioned within one Wheeler radian sphere of a center of the antenna.

18. The apparatus of claim 14, wherein the variable reactance component comprises at least one of one or more capacitors and one or more inductors.

19. The apparatus of claim 18, wherein the one or more capacitors comprise one of one or more variable impedance capacitors and one or more switched capacitors each having a fixed impedance, and wherein the one or more inductors comprise one of one or more variable impedance inductors and one or more switched inductors each having a fixed impedance.

20. The apparatus of claim 14, wherein the variable reactance component comprises at least one of semiconductor varactors, micro-electro-mechanical systems (MEMS) varactors, MEMS switched reactive elements, semiconductor switched reactive elements, and ferroelectric capacitors.