System and method to read and write data a magnetic tunnel junction element
First Claim
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1. A device comprising:
- a spin transfer torque (STT) magnetic tunnel junction (MTJ) element; and
a transistor coupled to the STT-MTJ element,wherein the transistor includes a first gate and a second gate, wherein the STT-MTJ element is within a memory cell in a memory array, wherein the first gate is coupled to a word line of the memory array, and wherein the second gate is coupled to a write enable line of the memory array.
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Abstract
A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device includes a spin transfer torque magnetic tunnel junction (STT-MTJ) element and a transistor with a first gate and a second gate coupled to the STT-MTJ element.
13 Citations
25 Claims
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1. A device comprising:
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a spin transfer torque (STT) magnetic tunnel junction (MTJ) element; and a transistor coupled to the STT-MTJ element, wherein the transistor includes a first gate and a second gate, wherein the STT-MTJ element is within a memory cell in a memory array, wherein the first gate is coupled to a word line of the memory array, and wherein the second gate is coupled to a write enable line of the memory array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A device comprising:
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as in transfer torque (STT) magnetic tunnel junction (MTJ) element; and a transistor coupled to the STT-MTJ element, wherein the transistor includes a first gate and a second gate, wherein a first signal applied to the second gate enables a data write at the STT-MTJ element, and wherein a second signal applied to the second gate disables a data write at the STT-MTJ element. - View Dependent Claims (11, 12, 13, 14)
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15. A memory comprising:
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an array of memory cells, the array including a plurality of columns, each memory cell in the array of memory cells including a magnetic tunnel junction (MTJ) device coupled to a dual-gate transistor, the dual-gate transistor having a first gate coupled to a word line of a plurality of word lines and having a second gate coupled to a write enable line of a plurality of write enable lines; wherein at least one column of the plurality of columns is controllable by the write enable line during a write operation. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A device comprising:
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a magnetic tunnel junction (MTJ) element; and a common portion of a read/write data path that includes a transistor coupled to the MTJ element, wherein the transistor includes a first gate and a second gate, wherein the first gate is coupled to a word line, and wherein the second gate is coupled to a write enable line. - View Dependent Claims (22)
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23. A method for storing data in a spin-torque transfer magnetoresistive random access memory (STT-MRAM), the method comprising:
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writing data into a magnetic tunnel junction (MTJ) element; and reading data out of the MTJ element; wherein the MTJ element is coupled to a transistor, wherein the transistor includes a first gate and a second gate, wherein writing data into the MTJ element uses a data write path, wherein reading data out of the MTJ element uses a data read path, wherein the data write path and the data read path are different paths, and wherein the first gate of the transistor and the second gate of the transistor decouple the data write path and the data read path. - View Dependent Claims (24, 25)
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Specification