Semiconductor device and method for manufacturing the same

• US 8,133,749 B2
• Filed: 04/24/2009
• Issued: 03/13/2012
• Est. Priority Date: 04/25/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo
• Primary Examiner(s): Booth, Richard A.
• Application Number:
  US12/429,201
• Publication Number:
  US 20090267225A1
• Time in Patent Office: 1,054 Days
• Field of Search: 438151-166, 438/30, 257/E21.561, 257/347
• US Class Current: 438/30
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H01L 2924/30105 Capacitance

Abstract

In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

Claims

1. A semiconductor device comprising:

a semiconductor integrated circuit between a first layer and a second layer;

a first organic layer between the semiconductor integrated circuit and the first layer; and

an antenna between the semiconductor integrated circuit and the second layer,

wherein the first layer comprises a fibrous body and an organic resin,

wherein the second layer comprises a fibrous body and an organic resin, and

wherein the first organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.

2. The semiconductor device according to claim 1, further comprising:

an adhesive layer between the semiconductor integrated circuit and a second organic layer.

3. The semiconductor device according to claim 1, further comprising:

a second organic layer on a side opposite to a side where the semiconductor integrated circuit is provided, of the second layer,

wherein the second organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.

4. The semiconductor device according to claim 1, wherein the first organic layer is a film having rubber elasticity.

5. The semiconductor device according to claim 1, wherein the first organic layer is an aramid film.

6. The semiconductor device according to claim 1, wherein a thickness of the first organic layer is from 5 μ

m to 20 μ

m.

7. The semiconductor device according to claim 1, further comprising an inorganic insulating layer provided between the antenna and the second layer.

8. The semiconductor device according to claim 1,

wherein the first layer has a structure body in which the fibrous body is impregnated with the organic resin, and

wherein the second layer has a structure body in which the fibrous body is impregnated with the organic resin.

32. The semiconductor device according to claim 1, wherein each of the fibrous body in the first layer and the fibrous body in the second layer comprises an inorganic compound.

37. The semiconductor device according to claim 1, wherein the semiconductor integrated circuit comprises a thin film transistor.

9. A semiconductor device comprising:

a semiconductor integrated circuit between a first impact resistance layer and a second impact resistance layer;

a first impact diffusion layer between the semiconductor integrated circuit and the second impact resistance layer; and

an antenna between the semiconductor integrated circuit and the second impact resistance layer,

wherein the first impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.

10. The semiconductor device according to claim 9, further comprising:

an adhesive layer between the semiconductor integrated circuit and the second impact diffusion layer.

11. The semiconductor device according to claim 9, further comprising:

a second impact diffusion layer on a side opposite to a side where the semiconductor integrated circuit is provided, of the second impact resistance layer,

wherein the second impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.

12. The semiconductor device according to claim 9, wherein the first impact diffusion layer is a film having rubber elasticity.

13. The semiconductor device according to claim 9, wherein the first impact diffusion layer is an aramid film.

14. The semiconductor device according to claim 9, wherein a thickness of the first impact diffusion layer is from 5 μ

m to 20 μ

m.

15. The semiconductor device according to claim 9, wherein an inorganic insulating layer is provided between the antenna and the second impact resistance layer.

16. The semiconductor device according to claim 9, wherein the first impact resistance layer has a structure body in which a fibrous body is impregnated with an organic resin, and

wherein the second impact resistance layer has a structure body in which a fibrous body is impregnated with an organic resin.

17. The semiconductor device according to claim 16, wherein the fibrous body is a woven fabric or a nonwoven fabric.

18. The semiconductor device according to claim 16, wherein the fibrous body is formed using one of a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber, a polyparaphenylene benzobisoxazole fiber, a glass fiber, and a carbon fiber.

19. The semiconductor device according to claim 16, wherein the organic resin comprises a thermosetting resin or a thermoplastic resin.

20. The semiconductor device according to claim 19, the thermosetting resin is at least one from the group consisting of an epoxy resin, an unsaturated polyester resin, a polyimide resin, a bismaleimide-triazine resin, and a cyanate resin.

21. The semiconductor device according to claim 19, wherein the thermoplastic resin is at least one from the group consisting of a polyphenylene oxide resin, a polyetherimide resin, and a fluorine resin.

22. The semiconductor device according to claim 15, the inorganic insulating layer is a silicon nitride film.

33. The semiconductor device according to claim 9, wherein the first impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound,

wherein the second impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound.

38. The semiconductor device according to claim 9, wherein the semiconductor integrated circuit comprises a thin film transistor.

23. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit;

forming an antenna over the semiconductor integrated circuit;

bonding a first impact resistance layer to the antenna circuit;

separating the semiconductor integrated circuit from the substrate;

bonding a second impact resistance layer and a first impact diffusion layer; and

bonding the first impact diffusion layer to the semiconductor integrated circuit,

wherein the first impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.

24. The method for manufacturing a semiconductor device according to claim 23,

wherein the first impact resistance layer is bonded to the antenna by a heat and pressure treatment, and

wherein the second impact resistance layer is bonded to the first impact diffusion layer by a heat and pressure treatment.

25. The method for manufacturing a semiconductor device according to claim 23, wherein a film having rubber elasticity is used as the first impact diffusion layer.

26. The method for manufacturing a semiconductor device according to claim 23, further comprising:

bonding a second impact diffusion layer to the first impact resistance layer after bonding the first impact resistance layer to the antenna,

wherein the second impact diffusion layer has a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.

27. The method for manufacturing a semiconductor device according to claim 23, wherein an inorganic insulating layer is formed over the antenna, and the second impact resistance layer is bonded over the inorganic insulating layer.

28. The method for manufacturing a semiconductor device according to claim 23,

wherein a structure body in which a fibrous body is impregnated with an organic resin is used for the first impact resistance layer, and

wherein a structure body in which a fibrous body is impregnated with an organic resin is used for the second impact resistance layer.

29. The method for manufacturing a semiconductor device according to claim 27, wherein a silicon nitride film is formed as the inorganic insulating layer.

34. The method for manufacturing a semiconductor device according to claim 23, wherein the first impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound,

wherein the second impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound.

39. The method for manufacturing a semiconductor device according to claim 23, wherein the semiconductor integrated circuit comprises a thin film transistor.

30. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit;

forming an antenna over the semiconductor integrated circuit;

forming a first impact resistance layer over the antenna;

forming a first impact diffusion layer over the first impact resistance layer;

bonding the semiconductor integrated circuit, the first impact resistance layer, and the first impact diffusion layer to each other by a heat treatment and pressure treatment;

separating the semiconductor integrated circuit from the substrate;

bonding a second impact resistance layer and a second impact diffusion layer by a heat and pressure treatment; and

bonding the second impact diffusion layer to the semiconductor integrated circuit,

wherein the first impact diffusion layer and the second impact diffusion layer have a lower modulus of elasticity and higher breaking strength than the first impact resistance layer and the second impact resistance layer.

35. The method for manufacturing a semiconductor device according to claim 30, wherein the first impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound,

wherein the second impact resistance layer comprises an organic resin and a fibrous body comprising an inorganic compound.

40. The method for manufacturing a semiconductor device according to claim 30, wherein the semiconductor integrated circuit comprises a thin film transistor.

31. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor integrated circuit over a substrate with a separation layer interposed between the substrate and the semiconductor integrated circuit;

forming an antenna over the semiconductor integrated circuit;

bonding a first layer to the antenna wherein the first layer has a structure body in which a fibrous body is impregnated with an organic resin;

separating the semiconductor integrated circuit from the substrate;

bonding a second layer and an organic layer wherein the second layer has a structure body in which a fibrous body is impregnated with an organic resin; and

bonding the organic layer to the semiconductor integrated circuit,

wherein the organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.

36. The method for manufacturing a semiconductor device according to claim 31, wherein each of the fibrous body in the first layer and the fibrous body in the second layer comprises an inorganic compound.

41. The method for manufacturing a semiconductor device according to claim 31, wherein the semiconductor integrated circuit comprises a thin film transistor.