Organic light emitting device

• US 8,134,149 B2
• Filed: 05/16/2011
• Issued: 03/13/2012
• Est. Priority Date: 06/20/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Takayama, Toru, Akiba, Mai
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/108,021
• Publication Number:
  US 20110233557A1
• Time in Patent Office: 302 Days
• Field of Search: 257/40, 257/103, 257/642, 257/643, 257/759, 257/E27.117, 257/E39.007, 257/E51.004, 257/E51.005, 257/E51.006, 257/E51.018
• US Class Current: 257/40
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film. As a result, a crack due to stress hardly occurs.

Claims

1. A light emitting device comprising:

a gate electrode over a substrate;

a first insulating film over the gate electrode;

a semiconductor film over the first insulating film;

an organic light emitting diode including an anode, an organic light emitting layer and a cathode over the semiconductor film;

a second insulating film on and in contact with the organic light emitting diode;

a first film comprising silicon nitride over the second insulating film; and

a second film comprising silicon nitride over the first film.

2. The light emitting device according to claim 1, wherein the semiconductor film is a crystalline semiconductor film.

3. The light emitting device according to claim 1, wherein the light emitting device further comprises:

an interlayer insulating film over the semiconductor film; and

a wiring connected to the semiconductor film through a contact hole in the interlayer insulating film.

4. The light emitting device according to claim 1, wherein the anode includes an ITO film.

5. The light emitting device according to claim 1, wherein the cathode includes MgAg.

6. The light emitting device according to claim 1, wherein the light emitting device further comprises capacitor storage comprising a second semiconductor film formed of the same material as the semiconductor film, the first insulating film, and an electrode formed of the same material as the gate electrode.

7. A light emitting device comprising:

a gate electrode over a substrate having flexibility;

a first insulating film over the gate electrode;

a semiconductor film over the first insulating film;

an organic light emitting diode including an anode, an organic light emitting layer and a cathode over the semiconductor film;

a second insulating film on and in contact with the organic light emitting diode;

a first film comprising silicon nitride over the second insulating film; and

a second film comprising silicon nitride over the first film.

8. The light emitting device according to claim 7, wherein the semiconductor film is a crystalline semiconductor film.

9. The light emitting device according to claim 7, wherein the light emitting device further comprises:

an interlayer insulating film over the semiconductor film; and

a wiring connected to the semiconductor film through a contact hole in the interlayer insulating film.

10. The light emitting device according to claim 7, wherein the anode includes an ITO film.

11. The light emitting device according to claim 7, wherein the cathode includes MgAg.

12. The light emitting device according to claim 7, wherein the light emitting device further comprises capacitor storage comprising a second semiconductor film formed of the same material as the semiconductor film, the first insulating film, and an electrode formed of the same material as the gate electrode.