Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes
First Claim
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1. At least one yellow, amber or red III-nitride Light Emitting Diode (LED), comprising:
- an active layer for emitting light, wherein;
the active layer is grown on at least one III-nitride-based semipolar plane, andthe semipolar plane enables a thickness of the active layer that is sufficiently thick, an Indium (In) composition of the active layer that is sufficiently high, and a crystal quality of the active layer that is sufficiently high, so that the III-nitride LED emits yellow, amber, or red light with a peak emission wavelength longer than 560 nm and an output power of more than 3.5 mW at a current of 20 mA.
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Abstract
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
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Citations
14 Claims
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1. At least one yellow, amber or red III-nitride Light Emitting Diode (LED), comprising:
an active layer for emitting light, wherein; the active layer is grown on at least one III-nitride-based semipolar plane, and the semipolar plane enables a thickness of the active layer that is sufficiently thick, an Indium (In) composition of the active layer that is sufficiently high, and a crystal quality of the active layer that is sufficiently high, so that the III-nitride LED emits yellow, amber, or red light with a peak emission wavelength longer than 560 nm and an output power of more than 3.5 mW at a current of 20 mA. - View Dependent Claims (4, 5)
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2. At least one yellow, amber or red III-nitride Light Emitting Diode (LED), comprising an active layer grown on at least one III-nitride-based semipolar plane, wherein:
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an active layer of the LED is comprised of indium (In) containing single or multi-quantum well structures comprising at least one quantum well, and the quantum well has a dislocation density of 9×
109 cm−
2 or less, so that the III-nitride LED emits yellow, amber, or red light with a peak emission wavelength longer than 560 nm and an output power of more than 3.5 mW at the current of 20 mA. - View Dependent Claims (3, 13, 14)
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- 6. A method of fabricating a yellow, amber, or red III-Nitride Light Emitting Diode (LED), comprising growing the III-Nitride LED on at least one III-nitride-based semipolar plane, so that the LED emits yellow, amber, or red light with a peak emission wavelength longer than 560 nm and an output power of more than 3.5 mW at a current of 20 mA.
Specification