Lithographic apparatus and device manufacturing method

• US 8,159,647 B2
• Filed: 07/09/2008
• Issued: 04/17/2012
• Est. Priority Date: 09/22/2003
• Status: Expired due to Fees

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Holding NV, ASML Netherlands BV (ASML Holding NV)
• Inventors: Bleeker, Arno Jan, Franken, Dominicus Jacobus Petrus Adrianus, Kochersperger, Peter C., Troost, Kars Zeger
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US12/170,120
• Publication Number:
  US 20080297747A1
• Time in Patent Office: 1,378 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67, 359/291, 359/292, 347/256
• US Class Current: 355/52
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/703 Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
• CPC Class Codes: G03F 7/707 Chucks, e.g. chucking or un-chucking operations or structural details
• CPC Class Codes: G03F 7/70783 Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Abstract

A maskless lithography system has a patterning array assembly formed by a plurality of patterning arrays, each patterning array having a substrate. Each patterning array has a plurality of individually controllable elements to endow an incoming radiation beam with a patterned cross-section. To reduce the global unflatness of the patterning array assembly that is oriented in a first plane, the position of at least one substrate of a patterning array is adjusted to a second orientation. Reduction of the global unflatness of the patterning array assembly reduces a telecentricity error without introducing additional error into the maskless lithography system.

Claims

1. A device manufacturing method using a maskless lithography system, the method comprising:

illuminating a patterning array assembly having a plurality of patterning arrays, each patterning array having a substrate and a plurality of individually controllable elements coupled to the substrate wherein the patterning array assembly is in a first orientation in a first plane;

adjusting a position of the substrate of at least one patterning array in the patterning array assembly from the first orientation in the first plane to a second orientation with respect to the first plane; and

exposing an object with the patterned light from the patterning array assembly.

2. The method of claim 1, wherein:

the first plane is coplanar with at least one other patterning array in the patterning array assembly, and

the second orientation is not coplanar with the substrate of at least one other patterning array.

3. The method of claim 1, wherein the second orientation is a second plane.

4. The method of claim 1, wherein the second orientation is parallel to the first plane.

5. The method of claim 1, wherein the second orientation is tilted at an angle with respect to the first plane.

6. The method of claim 1, wherein the second orientation is curved with respect to the first plane.

7. The method of claim 1, wherein the position of the substrate of at least one patterning array is adjusted to compensate for focal deviation of the patterned light at the object.

8. The method of claim 1, wherein the position of the substrate of at least one patterning array is adjusted actively.

9. The method of claim 1, wherein the position of the substrate of at least one patterning array is adjusted using pistons.

10. The method of claim 1, wherein the method is performed during an initial setup of the maskless lithography system.

11. The method of claim 1, wherein the method is performed periodically for maintenance of the maskless lithography system.

12. A device manufacturing method using a maskless lithography system, comprising:

illuminating a patterning array assembly including patterning arrays, each patterning array having a substrate and a plurality of individually controllable elements coupled to the substrate, wherein the substrate of each of the patterning arrays has a first position;

adjusting the substrate of a first one of the patterning arrays from the first position to a second position;

transmitting light from the patterning array assembly through an optical system; and

exposing an object with the transmitted light,

wherein the first position is coplanar with the substrates of the patterning arrays in the patterning array assembly and the second position is not coplanar with the patterning array assembly.

13. The method of claim 12, wherein the second position is parallel to the first position.

14. The method of claim 12, wherein the adjusting comprises tilting the substrate of the first one of the patterning arrays.

15. The method of claim 12, wherein the adjusting comprises bending the substrate of the first one of the patterning arrays.

16. A device manufacturing method using a maskless lithography system having a plurality of patterning arrays in a patterning array assembly, each patterning array having a substrate and a plurality of individually controllable elements coupled to the substrate, the patterning array assembly having a reflective surface, the method comprising:

adjusting a position of the substrate of at least one of the plurality of patterning arrays based on a detected optical aberration;

illuminating the patterning array assembly;

transmitting light reflected by the patterning array assembly through an optical system; and

exposing an object with the light,

wherein the adjusting step causes the reflective surface of the patterning array assembly to deviate from a flat plane.

17. The method of claim 16, wherein the adjusting comprises:

receiving exposure data at a plane of the object;

determining corrective adjustment needed for the substrate of at least one of the plurality of patterning arrays, wherein the adjustment is based on the exposure data; and

adjusting the substrate of at least one of the plurality of patterning arrays to reduce the optical aberration.

18. A maskless lithography system, comprising:

an illumination source configured to produce light; and

a patterning array assembly having patterning arrays, each patterning array in the patterning arrays having a substrate and a plurality of individually controllable elements coupled to the substrate, the substrate of each patterning array being coupled to a respective adjuster;

an optics system configured to condition the light,

wherein each of the respective adjusters moves the substrate of a respective one of the patterning arrays to correct for an optical aberration in the light received by an object, such that a surface of the patterning array assembly deviates from a flat plane.

19. The system of claim 18, wherein the optical aberration is total focus deviation.

20. The system of claim 18, wherein the adjuster is a set of adjusters.

21. The system of claim 20, wherein the set of adjusters tilts the substrate of a respective one of the patterning arrays.

22. The system of claim 20, wherein the set of adjusters bends the substrate of a respective one of the patterning arrays.

23. The system of claim 20, wherein the set of adjusters changes an elevation of the substrate of a respective one of the patterning arrays.

24. The system of claim 20, further comprising:

a controller that controls the adjusters.

25. The system of claim 24, wherein the adjusters are pistons.

26. The system of claim 22, wherein the adjusters are screws.