Methods of forming light emitting devices having current reducing structures
First Claim
1. A method of forming a light emitting device, comprising:
- forming a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer;
forming a non-transparent feature on the n-type semiconductor layer opposite the p-type semiconductor layer; and
forming a reduced conductivity region in the p-type semiconductor layer, wherein edges of the reduced conductivity region are aligned with edges of the non-transparent feature, the reduced conductivity region extending from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region.
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Accused Products
Abstract
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
102 Citations
14 Claims
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1. A method of forming a light emitting device, comprising:
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forming a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer; forming a non-transparent feature on the n-type semiconductor layer opposite the p-type semiconductor layer; and forming a reduced conductivity region in the p-type semiconductor layer, wherein edges of the reduced conductivity region are aligned with edges of the non-transparent feature, the reduced conductivity region extending from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a light emitting device, comprising:
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forming a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer; forming a wire bond pad on the n-type semiconductor layer opposite the p-type semiconductor layer; and forming a metal contact on a surface of the p-type semiconductor layer opposite the n-type semiconductor layer, wherein the metal contact forms an ohmic contact to the p-type semiconductor layer in a region other than a reduced conductivity area of the surface of the p-type semiconductor layer, wherein edges of the reduced conductivity area are aligned with edges of the wire bond pad. - View Dependent Claims (10, 11, 12, 13)
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14. A method of forming a light emitting device, comprising:
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forming a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer; forming a wire bond pad on the n-type semiconductor layer opposite the p-type semiconductor layer; forming a metal contact on a surface of the p-type semiconductor layer opposite the n-type semiconductor layer, wherein the metal contact forms on ohmic contact to the p-type semiconductor layer in a region other than a reduced conductivity area of the surface of the p-type semiconductor layer that is aligned with the wire bond pad; and forming a reduced conductivity region in the n-type semiconductor layer and aligned with the wire bond pad, the reduced conductivity region extending from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region, wherein the non-ohmic contact comprises an insulator on the surface of the p-type semiconductor layer.
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Specification