Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container

• US 8,193,532 B2
• Filed: 05/25/2011
• Issued: 06/05/2012
• Est. Priority Date: 02/24/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Ishikawa, Akira, Takayama, Toru, Maruyama, Junya, Goto, Yuugo, Ohno, Yumiko, Tachimura, Yuko
• Primary Examiner(s): MATTHEWS, COLLEEN ANN
• Application Number:
  US13/115,133
• Publication Number:
  US 20110223966A1
• Time in Patent Office: 377 Days
• Field of Search: 257/66, 257/E27.111, 257/E29.295, 174/250, 174/260
• US Class Current: 257/66
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

The present invention provides an ultrathin thin film integrated circuit and a thin film integrated circuit device including the thin film integrated circuit device. Accordingly, the design of a product is not spoilt while an integrated circuit formed from a silicon wafer, which is thick and produces irregularities on the surface of the product container. The thin film integrated circuit according to the present invention includes a semiconductor film as an active region (for example a channel region in a thin film transistor), unlike an integrated circuit formed from a conventional silicon wafer. The thin film integrated circuit according to the present invention is thin enough that the design is not spoilt even when a product such as a card or a container is equipped with the thin film integrated circuit.

Claims

1. An article comprising:

a sensor portion configured to receive information wirelessly from a flexible integrated circuit,

wherein the flexible integrated circuit comprises an antenna and a transistor including an impurity region, which are disposed over a substrate with flexibility, and

wherein the antenna is formed in a same layer as a wiring directly connected to the impurity region.

2. The article according to claim 1, wherein the substrate with flexibility is a plastic substrate.

3. The article according to claim 1, wherein the transistor includes a semiconductor film comprising silicon.

4. The article according to claim 1, wherein nonuniformity of a film thickness of the flexible integrated circuit is at most several hundred nanometers.

5. The article according to claim 1, wherein the article is a cellular phone provided with a reading function.

6. The article according to claim 1, wherein the article is a reader/writer of a contactless type.

7. An article comprising:

a sensor portion configured to receive information wirelessly from a flexible integrated circuit,

wherein the flexible integrated circuit comprises an antenna and a transistor including an impurity region, which are disposed over a substrate with flexibility,

wherein the antenna is formed in a same layer as a wiring directly connected to the impurity region, and

wherein a thickness of the flexible integrated circuit is 1500 nm to 3000 nm.

8. The article according to claim 7, wherein the substrate with flexibility is a plastic substrate.

9. The article according to claim 7, wherein the transistor includes a semiconductor film comprising silicon.

10. The article according to claim 7, wherein nonuniformity of a film thickness of the flexible integrated circuit is at most several hundred nanometers.

11. The article according to claim 7, wherein the article is a cellular phone provided with a reading function.

12. The article according to claim 7, wherein the article is a reader/writer of a contactless type.

13. An information receiving system comprising:

an article comprising a sensor portion configured to receive information wirelessly from a flexible integrated circuit,

wherein the flexible integrated circuit comprises an antenna and a transistor including an impurity region, which are disposed over a substrate with flexibility, and

wherein the antenna is formed in a same layer as a wiring directly connected to the impurity region.

14. The information receiving system according to claim 13, wherein the substrate with flexibility is a plastic substrate.

15. The information receiving system according to claim 13, wherein the transistor includes a semiconductor film comprising silicon.

16. The information receiving system according to claim 13, wherein nonuniformity of a film thickness of the flexible integrated circuit is at most several hundred nanometers.

17. The information receiving system according to claim 13, wherein the article is a cellular phone provided with a reading function.

18. The information receiving system according to claim 13, wherein the article is a reader/writer of a contactless type.

19. An information receiving system comprising:

an article comprising a sensor portion configured to receive information wirelessly from a flexible integrated circuit,

wherein the flexible integrated circuit comprises an antenna and a transistor including an impurity region, which are disposed over a substrate with flexibility,

wherein the antenna is formed in a same layer as a wiring directly connected to the impurity region, and

wherein a thickness of the flexible integrated circuit is 1500 nm to 3000 nm.

20. The information receiving system according to claim 19, wherein the substrate with flexibility is a plastic substrate.

21. The information receiving system according to claim 19, wherein the transistor includes a semiconductor film comprising silicon.

22. The information receiving system according to claim 19, wherein nonuniformity of a film thickness of the flexible integrated circuit is at most several hundred nanometers.

23. The information receiving system according to claim 19, wherein the article is a cellular phone provided with a reading function.

24. The information receiving system according to claim 19, wherein the article is a reader/writer of a contactless type.